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  • 1
    Electronic Resource
    Electronic Resource
    Raman scattering probe of ion-implanted and pulse laser annealed GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3921-3926 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report Raman scattering studies of phosphorus-ion-implanted and subsequently pulse laser annealed (PLA) GaAs. The threshold value of implantation fluence for the disappearance of one-phonon modes in the Raman spectrum of ion-implanted GaAs sample is found to be greater than that for the two-phonon modes by an order of magnitude. The phonon correlation length decreases with increasing disorder. The lattice reconstruction process during PLA creates microcrystallites for incomplete annealing, whose sizes can be given by the phonon correlation lengths, and are found to increase with the annealing power density. The intensity ratio of the Raman spectra corresponding to the allowed longitudinal-optical (LO)-phonon mode to the forbidden transverse-optical (TO)-phonon mode, ILO/ITO, is used as a quantitative measure of crystallinity in the implantation and PLA processes. The threshold annealing power density is estimated to be 20 MW/cm2 for 70 keV phosphorus-ion-implanted GaAs at a fluence of 5×1015 ions/cm2. The localized vibrational mode of phosphorus is observed in PLA samples for fluences above 1×1015 ions/cm2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361818
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  • 2
    Electronic Resource
    Electronic Resource
    Raman studies on GaAs1−xBix and InAs1−xBix (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1657-1663 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice vibrational properties of new semiconductor alloys, GaAs1−xBix and InAs1−xBix, are reported. These alloys, which were grown by metalorganic vapor phase epitaxy technique, contain a small amount (1.2%–3.8%) of Bi. A detail Raman scattering study of these new alloys, which exhibit weak temperature dependence of the band gap with increasing amount of Bi, is reported here. Good crystalline quality and spatial homogeneity was confirmed using micro-Raman technique. The alloys show ternary compound behavior, confirming substitutional incorporation of Bi into the lattice site. New vibrational modes observed were assigned to GaBi-like and InBi-like modes. In addition, phonon-plasmon coupled modes and vibrational modes corresponding to Bi and As materials were also observed. Results are discussed to characterize these new alloys in detail. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1336561
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  • 3
    Electronic Resource
    Electronic Resource
    Confinement effects on the electronic and vibronic properties of CdS0.65Se0.35 nanoparticles grown by thermal annealing (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4109-4116 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdS0.65Se0.35 nanoparticles are grown in a glass matrix by thermally annealing a base glass material, in which Cd, S, and Se were introduced by diffusion. The starting base material contains no crystalline structure. A comparative study of the confinement effects on the annealed samples using photoluminescence, low-frequency Raman, and optical Raman scattering experiments is presented. Growth of nanoparticles is observed with the three independent experimental techniques as the annealing temperature is varied from 550 to 800 °C. Radii of the thermally grown nanoparticles calculated from the three independent techniques are found to be in good agreement. In addition, surface phonon modes are observed in the optical spectral range, the frequencies of which agree well with those calculated theoretically. As expected from the theory, the positions of the surface phonons are found to be independent of the particle size. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289813
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  • 4
    Electronic Resource
    Electronic Resource
    Raman Scattering from Wurtzite GaN Bulk Crystal (2002)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 389-393 (Apr. 2002), p. 1501-1504 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/06/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.389-393.1501.pdf
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