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  • 1
    Electronic Resource
    Electronic Resource
    GaAs-Si heterojunction bipolar transistor (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 822-824 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaAs/Si heterojunction bipolar transistor (HBT) structure is proposed having application for high-frequency operation. The structure combines the high-frequency capability of the GaAs/AlGaAs system with the advanced processing technology of Si. The proposed device consists of an n-AlGaAs/p-GaAs emitter and base layers on an n-Si collector with improved junction characteristics at the GaAs/Si heterointerface afforded by thermal annealing. This novel device structure combines the advantages associated with a wide band-gap AlGaAs emitter, the high electron mobility of GaAs, and the substantial reduction in device parasitics accorded the self-aligned structure. Additionally, the proposed device offers the possibility of planar GaAs processing. With the use of a compact transistor model, calculations of the high-speed capability of this transistor are presented. For an emitter-base junction area of 1 μm×5 μm, optimized fmax=108 GHz and fmax=ft=89 GHz were computed for the GaAs/Si HBT, compared to 76 and 62 GHz, respectively, for equivalent GaAs/AlGaAs HBT's.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99295
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Characteristics of annealed p/n junctions between GaAs and Si (100) (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1995-1997 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical characteristics of GaAs( p)/Si(n) interface were determined from capacitance-voltage (C-V), current-voltage (I-V), and secondary ion mass spectroscopy (SIMS) measurements and compared to those on GaAs( p) epitaxial layes on GaAs(n) substrates. The comparison was made between the junctions as grown and after an anneal at 850 °C for 20 min in 10% forming gas under an As overpressure. For the GaAs/Si junction the ideality factor changed from 2 or larger to 1.5 and the apparent intercept voltage changed from 2.5 to 1.3 V after annealing. For the GaAs homojunction, the intercept voltage increased from 1.1 to 1.3 V. In addition, the excess current in the forward and reverse bias conditions dropped drastically in the heterojunction. No movement of the metallurgical junction was discernible to within the resolution capability of SIMS. The junction properties obtained by annealing suggest an atomic restructuring of the Si(100) interface during growth or annealing. These new results raise the possibility that the GaAs/Si interface can be made into an electrically viable junction and incorporated into active devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98322
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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