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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1683-1689 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to study the mechanisms of electrical charge creation in insulators under particle bombardment, we used different techniques: metastable atom deexcitation spectroscopy (MDS) and secondary ion mass spectroscopy (SIMS). SiO2 (quartz for MDS and a thin silica film for SIMS) was bombarded with a He* atom (MDS) and a He+ ion (SIMS). MDS involves neutralization of the incident atom, and SIMS involves a competition of two mechanisms: (i) neutralization through potential energy transfer, and (ii) a cascade of collisions through kinetic energy transfer. Under the He* metastable atom, the surface charges up positively; under the He+ ion, the initial potential on the surface is negative and slowly evolves towards a positive value, which is still under bombardment. On the basis of electron transfer models, we propose to explain the observed kinetics of charge under ions in three steps: (1) appearance of initial negative charge; (2) increase in the positive counterpart of the charge because of the neutralization of He+ with electrons trapped in the localized levels due to oxygen vacancies; (3) stabilization of the charge at a positive value because of the dominant character of the neutralization versus sputtering.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5139-5144 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron bombardment of thick pure SiO2 induces the buildup of a negative charge which can be observed through a "mirror'' effect in a conventional Auger scanning microscope. A mechanism for the creation of this charge is proposed in terms of trapping of an electron in defects due to the irradiating beam. The influence of temperature is studied on amorphous and monocrystalline SiO2. The temperature dependence of the existence of high negative charge shows around 270 °C an anomalous effect which depends on the irradiation time. The role of electronic excitation to produce defects in silica is discussed.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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