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Digitale Medien

Crystallization of layered metal-dichalcogenides films on amorphous substrates (1995)

Galun, E. ; Cohen, H. ; Margulis, L. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 3474-3476

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Anisotropic materials with layered structure, like MoS2 and WSe2, play an important role in a number of technologies. Some of these applications (lubrication, photovoltaics) require polycrystalline films oriented with their c axis perpendicular to the substrate surface (type-II texture), which is the thermodynamically favorable texture. However, films with the substrate (parallel)c (type-I texture) are usually obtained. We report that an ultrathin (〈10 nm) metal-chalcogenide interlayer eutectics, like Ni3Se2, SnSe〈thin〉2, or InSe disentangle the growth mode of the film from the underlying amorphous substrate, and hence, WSe2 films with a perfect type-II texture and crystallites at least a few mm2 large are obtained at temperatures as low as 700 °C (van der Waals rheotaxy–vdWR). The mechanism for this growth mode is proposed. © 1995 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.115251

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