ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The electrical switching process in glassy semiconductors has been studied by a computer simulation method. The operation of a switching device has been considered from the standpoint of internal heat generation and the attendant rise in device temperature. A simple model has been chosen for an analysis in which the thermal and electrical parameters are related in a non-linear manner through the exponential dependence of conductivity on temperature. Furthermore, field-dependence effects (space-charge formation) are introduced in order to complete the model, which could be called “electronically assisted” thermal breakdown. The simulated current-voltage relationship exhibits a turnover voltage and conditions of negative differential resistance. To summarize, it is demonstrated that the application of a computer simulation is useful, in order to examine the switching phenomenon.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01132043
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