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  • 1
    Electronic Resource
    Electronic Resource
    The characterization of high electron mobility transistors using Shubnikov–de Haas oscillations and geometrical magnetoresistance measurements (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 928-936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shubnikov–de Haas oscillations and geometrical magnetoresistance measurements are used to determine the two most important parameters, channel concentration and mobility, respectively, for high electron mobility transistors. To deduce useful data from measurements, the theory of the Shubnikov–de Haas oscillation for the two-dimensional electrons is derived and discussed in detail. The experimental data for the channel concentration as a function of gate voltage is used to check the accuracy of the charge-control law. We also derive a simple formula of the geometrical magnetoresistance to calculate the mobility for any aspect ratio. The concentration and mobility deduced from the Shubnikov–de Haas and geometrical magnetoresistance measurements give us insight on the nature and properties of the devices. The experimental data shows that the impurity scattering is the dominant mechanism for the low channel concentration. The maximum transconductance occurs at a compromise between the charge-control ability of the gate voltage and the channel mobility. Near the cutoff region the decrease of the conductivity is due to the decrease of both the channel concentration and the mobility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343522
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Simple method for evaluating process-induced charging damage to the gate oxide of metal-oxide-semiconductor devices (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1770-1772 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter presents a simple approach to characterize process-induced charging damage in the gate oxide of metal-oxide-semiconductor (MOS) devices. The method uses the monitoring of voltage transients during constant-current stress performed on plasma-damaged and reference devices. The difference in transients allows direct extraction of the amount of electron traps created in the oxide by charging currents during processing. The method is verified by experimental simulation and applied to extract the density of electron traps introduced in the oxide by process-induced charging. This technique is a fast and efficient approach to assess device damage and extract physical parameters of generated traps which can be used later for lifetime prediction in reliability simulators. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117480
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Generation of hole traps in thin silicon oxide layers under high-field electron injection (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1826-1828 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The letter reports an observation of a new degradation mechanism in thermal silicon dioxide layers on silicon, namely generation of hole traps under high-field stressing of metal-oxide-semiconductor (MOS) structure. Excess hole trapping due to newly generated hole traps is observed by substrate hot-hole injection in 9 nm oxide of p-channel MOS transistors after high-field Fowler-Nordheim stress followed by standard post-metallization annealing in nitrogen. The concentration of generated traps has a weak stress-polarity dependence and increases with electron fluence during degrading stress. Relaxation behavior under switching oxide fields indicates that the nature of hole trapping sites is different from anomalous positive charge centers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116026
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    Paper (German National Licenses)
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