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  • 1
    Electronic Resource
    Electronic Resource
    Doping reaction of PH3 and B2H6 with Si(100) (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 4032-4037 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction of phosphine PH3 and diborane B2H6 on Si(100) surfaces was studied by surface analytical techniques in relation to the in situ doping process in the chemical vapor deposition of silicon. Phosphine chemisorbs readily either nondissociatively at room temperature or dissociatively with the formation of silicon–hydrogen bonds at higher temperatures. Hydrogen can be desorbed at temperatures above 400 °C to generate a phosphorus layer. Phosphorus is not effective in shifting the Fermi level until the coverage reaches 2×1014/cm2. A maximum shift of 0.45 eV toward the conduction band was observed. In contrast, diborane has a very small sticking coefficient and the way to deposit boron is to decompose diborane directly on the silicon surface at temperatures above 600 °C. Boron at coverages less than 2×1014/cm2 is very effective in shifting the Fermi level toward the valence band and a maximum change of 0.4 eV was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336708
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  • 2
    Electronic Resource
    Electronic Resource
    Ellipsometric and Rutherford backscattering characterization of low-energy hydrogen-, helium-, neon-, and argon-bombarded silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5288-5294 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ellipsometry and Rutherford backscattering/channeling were used to study silicon surfaces modified by low-energy hydrogen, helium, neon, and argon ion bombardment. Ellipsometry was found to be a very sensitive technique for characterization of these samples, able in some cases to simultaneously distinguish the ion identity, incident energy, and total dose experienced by the material. A comparison of the ellipsometric results for the different cases indicates qualitative differences in the physical modifications induced in the silicon surface region under bombardment by different ions. Comparison of the ellipsometric results with Rutherford backscattering/channeling data yielded estimates of the complex refractive index of the silicon layer modified by hydrogen and helium bombardment, showing a general decrease in the refractive index and an increase in the optical extinction coefficient upon bombardment. It was possible to explain these changes, at least qualitatively, by using the Bruggeman effective medium approximation to estimate the volume composition of this layer subject to certain simplifying assumptions. One result of this was the development of the exact solution for the three-component Bruggeman analysis; these equations are derived in the Appendix.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340392
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  • 3
    Electronic Resource
    Electronic Resource
    Sputtering of chlorinated silicon surfaces studied by secondary ion mass spectrometry and ion scattering spectroscopy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1336-1342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the sputtering of chlorinated Si surfaces by 1-keV Ne+ impact using secondary ion mass spectrometry and low-energy ion scattering spectroscopy. Under steady-state conditions of submonolayer Cl coverage, SiCl+x ions (x=0–3) are all observed with identical coverage dependence. Cross sections for removal of Cl from Si are independent of initial coverage in the submonolayer regime. Sputter cross sections increase from 0.5×10−15 cm2 at normal incidence to a maximum of 22×10−15 cm2 at ∼70° angle of incidence. Secondary ion yields are shown to be markedly dependent on the presence of recoil-implanted Cl in the substrate. The details of Cl sputtering and Si removal processes in ion-assisted etching suggest a major role for recoil implantation of Cl into the Si lattice in formation and removal of SiClx products in etching reactions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334536
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  • 4
    Electronic Resource
    Electronic Resource
    Gating of germanium surfaces using pseudomorphic silicon interlayers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 692-694 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel insulator structure for gating of germanium surfaces has been developed. The structure consists of a very thin (on the order of 10 A(ring)) pseudomorphic silicon layer deposited on the germanium surface prior to deposition of a silicon dioxide insulating layer. Both the silicon and silicon dioxide layers were deposited at low temperature by remote plasma-enhanced chemical vapor deposition. Low interface state densities and surface inversion have been obtained for both n- and p-type germanium substrates. X-ray photoelectron spectroscopy and ion scattering spectroscopy analysis indicate that the thin pseudomorphic silicon layer provides complete silicon coverage of the germanium surface. The silicon layer protects the germanium surface from undesirable oxidation during the silicon dioxide deposition. The electrical properties of germanium metal-insulator-semiconductor structures which incorporated the silicon interlayer were much improved compared to structures in which the silicon dioxide was deposited directly on the germanium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100642
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  • 5
    Electronic Resource
    Electronic Resource
    Interface engineering with pseudormorphic interlayers: Ge metal-insulator-semiconductor structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 581-584 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Significant improvements in gating of Ge surfaces are achieved with the use of thin, pseudomorphic Si interlayers. Metal-insulator-semiconductor structures with mid-gap interface state densities of 5×1010 cm−2 eV−1 and showing no hysteresis have been realized on both n- and p-type Ge. The key elements of this technology are: surface cleaning, deposition of a thin Si interlayer, and the deposition of the gate dielectric, SiO2, all of which are performed in situ and sequentially at 300 °C in a single chamber with the remote plasma technique. Ion scattering spectroscopy shows complete coverage of the Ge surface by the Si layer. X-ray photoelectron spectroscopy shows the Si interlayer is about 18 A(ring) thick. The Si interlayer prevents the interfacial oxidation of the underlying Ge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104247
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    Paper (German National Licenses)
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