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  • 1
    ISSN: 1570-1468
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: Conclusions 1. The Zeya dam is in a satisfactory state, but is operating under conditions different from the design assumptions, under the effect of geodynamic forces — natural and induced seismicity with mainly a transverse direction of the earthquake and, probably, creep pressure from the right bank. 2. The design model of a plane stress state adopted in the design does not correspond to the real conditions of the static behavior of the structure which is in a volume stress state. The presence of dynamic loads requires determination of the dynamic characteristics of the structure and corresponding check calculations. 3. The geodynamic effect on the SSS of the dam requires improvement of the system of on-site observations and the organization of a geodynamic test area at the Zeya hydrostation in accordance with the decisions of the Ministry of Fuel and Energy of the Russian Federation. Before the creation of this test area the geodynamic effects should be monitored by the available measuring instruments according to the method of OIFZ and VNIIG. 4. The existing structural members of the deck of the cavities between buttresses require improvement with consideration of their new, antiseismic function, their incorporation into the calculation scheme, and equipping with measuring instruments. 5. The state of the dam and conditions of its operation require the creation of a mathematical model of the structure with consideration of the results of on-site observations and creation of a data bank for predictive purposes.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 0042-207X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The relative stability of crystalline phases of the lanthanum-carbon system with metal contents up to 33.3 at. % is investigated using the method of semiempirical atom-atom potentials. It is shown that the stability of these phases depends on the stoichiometry, the structure and degree of order of the lattice, and also on the crystal size. Among the bulk phases, the most stable is a phase with the calcium carbide structure, followed by phases with the metal graphitide and fluorite structures. In layers with thicknesses of a few nanometers, including 1–4 monolayer films, the energies of formation of lanthanum graphitide and carbide approach one another. This makes the phase transition from carbide to graphitide easier, especially when the film of lanthanum-carbon compound is grown on the surface of single-crystal graphite.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Russian physics journal 10 (1967), S. 55-59 
    ISSN: 1573-9228
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The voltage-current and voltage-capacitance characteristics of rectifier barriers obtained by electrochemical deposition of nickel on electronic gallium arsenide were studied. It turned out that the electrical properties of barrier layer diodes depend in large measure on the conditions of formation of the rectifier junction, on the charge carrier concentration in the semiconductor, and on the crystallographic orientation of its surface. Schottky-type barriers were obtained by appropriate treatment of the semiconductor surface.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Russian physics journal 13 (1970), S. 223-225 
    ISSN: 1573-9228
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract An etchant has been found for the selective etching of gallium antimonide, and a study has been made of the anisotropy of the dissolution along the main crystallographic directions. The dissolution rates of the gallium antimonide faces obey $$v_{\left( {111} \right)B} 〉 v_{\left( {1 \cdot 0} \right)} 〉 v_{\left( {110} \right)} 〉 v_{\left( {111} \right)A} .$$ An optical method has been developed for orienting gallium antimonide crystals on the basis of the main crystallographic planes. Reflection patterns from GaSb differ from those from gallium arsenide, germanium, and silicon.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Russian physics journal 14 (1971), S. 61-65 
    ISSN: 1573-9228
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A study was made of the temperature dependence of the current-voltage characteristics of surface-barrier metal-n-type gallium arsenide junctions with various doping levels. The transport mechanism is shown to be governed by the temperature and by the electric field in the space-charge layer; thermionic or thermionic-field emission occurs.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Russian physics journal 16 (1973), S. 923-927 
    ISSN: 1573-9228
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Single crystals of n-type CdSnAs2 with a carrier concentration of 2 ·1017−4 ·1018 cm−3 and mobility (3 to 6) · 103 cm2/V ·sec were copper doped by diffusion saturation at temperatures from 400 to 570
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Russian physics journal 18 (1975), S. 1137-1141 
    ISSN: 1573-9228
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The activation peculiarities and fast surface state (FSS) parameters, including the recombination centers (RC) caused by adsorption of silver ions on a germanium surface in contact with a neutral electrolyte and oriented along the three main cristallographic planes (111), (110), and (100), were investigated. It has been detected that the anisotropy of the FSS and RC parameters differs from that found earlier for a “pure” germanium surface or for gold-doped germanium under analogous conditions, but agrees with the anisotropy of the potential distribution on the Ge-electrolyte interface and is apparently governed thereby, exactly as in later cases. The surface state parameters are quite close in all cases. The singularities in the kinetics of surface state activation are associated with the higher migration capability of the silver ions under the effect of polarization. It is shown that successive adsorption of gold and silver ions does not result in the effect of neutralizing the RC which is observed on a “dry” germanium surface in such a situation.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Russian physics journal 19 (1976), S. 1163-1165 
    ISSN: 1573-9228
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The influence of hydrostatic pressure on the peak current of gallium arsenide tunnel diodes is studied in this paper. Analysis of the experimental pressure dependence of the peak current for diodes with different levels of doping in the n region and comparison with the theory served as the basis for finding the size of the energy gap between the absolute and secondary minima at the point X1 and the velocity of travel of the energy gap with pressure: Δ0=(0.37±0.01) eV; dΔ/dP = −(15±2)·10−6 eV/bar.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1573-9228
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Forward biased currents in GaSb tunnel diodes are studied. In the excess current region four segments with differing current transfer mechanisms can be distinguished in the forward branch of the current-voltage curve (CVC) for unirradiated diodes. Irradiation by electrons with energies of 2.2 MeV produces an increase in excess current accompanied by a change in the current transfer mechanisms in the individual segments. The increase in excess current is related to formation and realignment of radiation defects which produce shallow and deep levels in the GaSb forbidden zone. Tunnel spectroscopy with irradiation was used to determine energy levels of Ec-0.060 and Ec −0.2 eV in the n-region of the p-n junction.
    Type of Medium: Electronic Resource
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