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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous LRE-TM SmCo perpendicular magnetic film provides a promising candidate for perpendicular magnetic recording media.1 In order to improve the magneto-optical properties of SmCo films, we have studied the ternary system: Smy(Co100−xDyx)100−y films which were prepared by rf magnetron sputtering system. Because the Dy moment is antiferromagnetically coupled to the Co moment and Dy has a larger magnetic anisotropy, Dy addition will increase Ku and decrease Ms of LRE-TM films. With the Dy addition content increased from 0 to 10 at. %, the perpendicular anisotropy constant K⊥ (K⊥ = Ku(K⊥=Ku− 2πM2s) increased to improve the magneto-optical properties of SmCo films. The torque curve measurement and Kerr hysteresis loop of SmCoDy film had proved it was perpendicular magnetic film. In order to prevent RE metal selective oxidation of SmCoDy films, a protective layer AlN was used. AlN films were prepared by rf reactive sputtering.2 The temperature dependence of AlN/SmCoDy/glass were studied. Hc decreased rapidly when temperature increased while its Kerr angle decreased slightly. When the sample was cooled to room temperature, Hc and θk returned to its original value. The results show SmCoDy films may become new material of magneto-optical recording media. The long-term stability and microstructure of SmCoDy films have also been studied.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5340-5340 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: RE-TM amorphous thin films with perpendicular magnetic anisotropy are promising for use in erasable optical recording media. In order to improve the drawback of easy oxidation and lower C/N of RE-TM films, some protective layers such as SiO, SiO2, ZnS, AlN, and Si3N4 films were studied.1,2 We have studied the Kerr effect enhancement and corrosion resistance improvement by AlN and AlSiN films. AlN and AlSiN films were prepared on glass, PC, and PMMA substrates by a rf magnetron sputtering system with three targets using low sputtering power. The films have a high refractive index (2–2.15), high optical transparency (over 90%), and high stability. The relation between optical properties and rf reactive sputtering conditions (Ar: N2 ratio, total pressure, sputtering power, sputtering time), composition, spectral transmittance, and uniformity of sputtering AlN and AlSiN films were studied. The Kerr rotation angle was up to 1.5° in AlN/TbFeCo/glass and AlSiN/TbFeCo/glass multilayer structures (laser is incident from air). We also studied AlN/TbFeCo/AlN/glass, AlN/TbFeCo/AlN/Al/glass, AlSiN/TbFeCo/AlSiN/glass and multilayer structure films. The results show that AlN and AlSiN films provide sufficient Kerr effect enhancement and superior corrosion resistance improvement to the RE-TM films. The microstructure of those films were also studied by JEM, XRD, and XPS.
    Type of Medium: Electronic Resource
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