ISSN:
0001-1541
Keywords:
Chemistry
;
Chemical Engineering
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Chemistry and Pharmacology
,
Process Engineering, Biotechnology, Nutrition Technology
Notes:
Elemental depth profile examined using secondary-ion mass spectroscopy and structural profile examined using grazing-incident X-ray diffractometry were applied to analyze the growth behavior of Pb1-xLax(ZryTi1-y)O3 (PLZTO) and Pb1-xLaxTiO3 (PLTO) thin films deposited on a Si substrate. When deposited under a suitably high substrate temperature, the chamber's oxygen pressure was observed to substantially influence the structure of the films. Low oxygen pressures (PO2 〈 0.01 mbar) deteriorate crystal structure without altering the composition of the films. Deposition of a buffer layer enhanced the formation kinetics of PLZTO and PLTO films. However, sufficiently thick SrTiO3 (∼500 nm) layer was required to achieve this effect. Using (La0.5Sr0.5)CoO3/Pt materials as double-layer electrodes not only prevented the film-to-substrate interaction, but resulted in preferentially oriented thin films. Ferroelectric properties of the films were thus greatly improved, with remanent polarization (Pr) around 14 ∼ 16 μC/cm2, coercive force (Ec) around 50 ∼ 60 kV/cm, and relative dielectric constant (ε) around 900 ∼ 1,000.
Additional Material:
9 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/aic.690431335
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