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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4660-4668 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The only II-VI/II-VI wide band-gap heterojunction to provide both good lattice match and p- and n-type dopability is CdSe/ZnTe. We have carried out numerical simulations of several light emitter designs incorporating CdSe, ZnTe, and Mg alloys. In the simulations, Poisson's equation is solved in conjunction with the hole and electron current and continuity equations. Radiative and nonradiative recombination in bulk material and at interfaces are included in the model. Simulation results show that an n-CdSe/p-ZnTe heterostructure is unfavorable for efficient wide band-gap light emission due to recombination in the CdSe and at the CdSe/ZnTe interface. An n-CdSe/MgxCd1−xSe/p-ZnTe heterostructure significantly reduces interfacial recombination and facilitates electron injection into the p-ZnTe layer. The addition of a MgyZn1−yTe electron confining layer further improves the efficiency of light emission. Finally, an n-CdSe/MgxCd1−xSe/MgyZn1−yTe/p-ZnTe design allows tunability of the wavelength of light emission from green into the blue wavelength regime.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1974-1976 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An overview is presented of band alignments for small-lattice parameter, refractory semiconductors. The band alignments are estimated empirically through the use of available Schottky barrier height data, and are compared to theoretically predicted values. Results for tetrahedrally bonded semiconductors with lattice constant values in the range from C through ZnSe are presented. Based on the estimated band alignments and the recently demonstrated p-type dopability of GaN, we propose three novel heterojunction schemes which seek to address inherent difficulties in doping or electrical contact to wide-gap semiconductors such as ZnO, ZnSe, and ZnS. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2981-2983 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used x-ray photoelectron spectroscopy (XPS) to measure the dependence of the InAs/GaSb valence band offset on both interface composition and growth order. Molecular beam epitaxy was used to grow InAs-on-GaSb and GaSb-on-InAs interfaces with both InSb-like and GaAs-like interface compositions. Analysis of XPS core level separations showed no dependence of the valence band offset on interface composition; however, a 90 meV increase in the valence band offset was observed for InAs grown on GaSb compared to GaSb grown on InAs. This difference is attributed to the extended nature of the InAs-on-GaSb interface. Results from analysis of an intentionally extended GaSb-on-InAs interface were consistent with this conclusion. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3455-3457 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used x-ray photoelectron spectroscopy to measure the valence-band offsets for the lattice matched MgSe/Cd0.54Zn0.46Se and MgTe/Cd0.88Zn0.12Te heterojunctions grown by molecular beam epitaxy. By measuring core level to valence-band maxima and core level to core level binding energy separations, we obtain values of 0.56±0.07 eV and 0.43±0.11 eV for the valence-band offsets of MgSe/Cd0.54Zn0.46Se and MgTe/Cd0.88Zn0.12Te, respectively. Both of these values deviate from the common anion rule, as may be expected given the unoccupied cation d orbitals in Mg. Application of our results to the design of current II-VI wide band-gap light emitters is discussed.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1962-1964 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a new device structure for obtaining visible light emission from wide band gap semiconductors. This heterojunction structure avoids ohmic contacting problems by using only the doping types which tend to occur naturally in II-VI semiconductors, while using a novel injection scheme to obtain efficient minority carrier injection into the wider band gap semiconductor. To verify this proposal we have fabricated green light emitting structures using n-CdSe and p-ZnTe regions separated by a graded MgxCd1−xSe injection region. Room temperature electroluminescence spectra from these devices demonstrate the effectiveness of the injection scheme, while the current-voltage characteristics show the merits of avoiding difficult ohmic contacts. We further show how the structure can be extended to blue wavelengths and beyond by opening up the band gap of the ZnTe recombination region with a MgyZn1−yTe alloy.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 259-262 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used time-resolved reflection high energy electron diffraction (RHEED) measurements to study anion exchange reactions in molecular beam epitaxy (MBE) grown III-V semiconductors. In the experiment, InAs surfaces are exposed to Sbx fluxes and subsequent changes in the crystals RHEED patterns are examined. We find that when an InAs surface is initially exposed to an Sb flux the specular spot intensity first decreases, then recovers back toward its initial value. The shape of the intensity versus time curves is extremely reproducible if the absolute Sb flux and the Sb species are kept constant. The length of time required for the RHEED pattern to stabilize is much shorter for cracked Sb than for uncracked Sb. The RHEED dynamics are also faster if the total Sb flux increases. The behavior of the RHEED dynamics as a function of Sb flux and Sb species is consistent with the changes in the RHEED pattern being due to an Sb/As exchange reaction on the crystal's surface. The RHEED data are compared to previously published x-ray photoelectron spectroscopy (XPS) data which studied exchange reactions on InAs surfaces exposed to Sb fluxes. The XPS study confirmed that the incident Sb did indeed exchange with As in the epilayer and estimated the exposure time needed to complete the Sb/As exchange reaction. The time scales for exchange associated with the RHEED and XPS data are in good agreement. This further indicates that RHEED could be used to indirectly probe anion exchange reactions, potentially opening up several avenues of research ranging from basic materials science to MBE process control in manufacturing.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Scandinavian journal of immunology 28 (1988), S. 0 
    ISSN: 1365-3083
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Affinity-purified rabbit and sheep anti-idiotypic antisera raised against mouse monoclonal anti-progesterone IgG1 antibody (DB3) or mouse myeloma IgG1 protein P3 (MOPC 21) showed high binding specificities to the respective idiotypes used for immunization as determined by RIA or ELISA. They have been used in an indirect immunofluorescent method to demonstrate the localization of parenterally administered idiotypes in pregnant or pseudopregnant BALB/c mouse frozen tissue preparations, at known stages post coitum after a single intraperitoneal or intravenous injection of DB3 or P3, DB3 was visualized on the surface of uterine luminal and glandular epithelia of pregnant mice 36 h after treatment; the localization was DB3-specific as it was not seen in mice treated with P3 (using sheep anti-P3 anti-idiotype as a probe) or saline. The fluorescent staining reaction in oviduct was weak and only appeared on the surface of the oviducal serosa (peritoneal side). Both DB3 and P3 were also localized in liver (granules W Kupffer cells), kidney (glomerular basement membrane), spleen (on the membrane surface of mononuclear cells in the white pulp), and peritoneal exudate cells (on the membrane surface). Staining could be completely blocked by the addition of the free idiotypes against which the anti-idiotypes were made but not by the unrelated idiotype. Anti-idiotypic labelling in vivo is more specific and selective than anti-whole immunoglobulin labelling.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    FEBS Letters 291 (1991), S. 195-198 
    ISSN: 0014-5793
    Keywords: Amylin ; Calcitonin gene-related peptide ; Glucose ; Lactate ; Plasma calcium ; Rat soleus muscle
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    FEBS Letters 291 (1991), S. 101-104 
    ISSN: 0014-5793
    Keywords: Blood pressure ; Gluconeogenesis ; Glucose ; Glycogen ; Lactate ; Rat skeletal muscle
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 0014-5793
    Keywords: Amylin ; Cori cycle ; Free glucose ; Muscle glucogenolysis
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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