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  • 1
    Electronic Resource
    Electronic Resource
    Atomspheric pressure organometallic vapor-phase epitaxial growth and characterization of Ga0.4In0.6P/(Al0.4Ga0.6)0.5In0.5P strained quantum wells (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3356-3363 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single and multiple Ga0.4In0.6P/(Al0.4Ga0.6)0.5In0.5P quantum wells have been grown using atmospheric pressure organometallic vapor phase epitaxy. The Ga0.4In0.6P well layers are coherently strained to match the lattice parameter of the GaAs substrate. Transmission electron microscopic results showed that the quantum-well layers are very uniform in thickness and the interface is abrupt and free of misfit dislocations. The photoluminescence peak energy increases as the well width decreases, due to carrier confinement in the quantum well. Growth interruptions do not change the photoluminescence peak energy of the quantum well. However, the photoluminescence intensity is drastically reduced for longer growth interruption times. Higher-order x-ray diffraction satellite peaks and a narrow photoluminescence halfwidth are observed in a 20-layer multiple-quantum-well sample, indicative of high structural uniformity and precise control of the composition and thickness during the growth process. Considering the effect of strain on the heterojunction band offsets, the photoluminescence peak energy of the strained quantum well can be described by a simple theory as a function of the well width.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346364
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  • 2
    Electronic Resource
    Electronic Resource
    The effect of oxygen incorporation in semi-insulating (AlxGa1−x)yIn1−yP (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1046-1048 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen-doped, semi-insulating layers of (AlxGa1−x)yIn1−yP with x=0.4 were grown on GaAs using organometallic vapor phase epitaxy (OMVPE). Secondary-ion mass spectrometry measurements show that the oxygen incorporation is proportional to the flow rate of O2 into the OMVPE reactor. Two-terminal metal-insulator-semiconductor devices were fabricated and used to evaluate the electrical characteristics of the (AlxGa1−x)yIn1−yP. Traps into the (AlxGa1−x)yIn1−yP bulk behave like DX centers, and are believed to be related to residual Si contamination. Increasing the oxygen concentration in the (AlxGa1−x)yIn1−yP layer decreases the trap concentration by the formation of oxygen complexes with the Si atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350396
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  • 3
    Electronic Resource
    Electronic Resource
    Measurement of the fundamental band gaps of a strained GaInAs layer (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1750-1756 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: All three strain- and spin-orbit-split energy gaps of the Γ15v-Γ1c series are measured for the first time for a thin, strained Ga0.526In0.474As layer by a combination of transmission, photoreflectance (PR), and photoluminescence experiments at 10 and 300 K. Values of strain and composition of the layer are calculated from the splitting of the (J=3/2, mj=±3/2) and (3/2, ±1/2) valence bands and from x-ray data. Force balance calculations predict the strain in the layer to be relaxed while energy balance calculations predict the layer to be strained. The onset of generation of misfit dislocations at the InP/GaInAs interface has recently been reported to be well described by the force balance model. Nevertheless, the data reported in the present study show the degree of plastic strain relaxation for the sample under investigation to be so small that it can be neglected for the interpretation of the optical spectra. Almost identical PR spectra are measured when the sample is excited at photon energies larger and smaller than the InP band gap. In both cases, the PR signal originates from modulation of built in fields at the heterointerfaces, rather than the surface field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346604
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  • 4
    Electronic Resource
    Electronic Resource
    Cutis marmorata telangiectatica congenita associated with an elevated maternal serum human chorionic gonadotrophin level and transitory isolated fetal ascites (1997)
    Oxford, UK : Blackwell Publishing Ltd
    British journal of dermatology 136 (1997), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: A 34–year–old woman with an abnormal maternal serum screening result and a Down syndrome risk of 1:60 calculated from a maternal serum alpha–fetoprotein (AFP) value of 1.4 multiples of the median (MoM) and a human chorionic gonadotrophin (hCG) level of 4.32 MoM at 18 weeks' gestation was found to have isolated fetal ascites at 23 weeks' gestation. Spontaneous resolution occurred 10 weeks after the initial presentation. After birth, the neonate had generalized cutis marmorata telangiectatica congenita (CMTC), large vascular plaques on the scalp with superficial ulceration and crusts, a small atrial septal defect, a patent ductus arteriosus, hepatomegaly, micrognathia, seizures, an abnormal electroencephalogram, congenital retinal detachment, glaucoma and widely spaced toes. Our patient illustrates that CMTC in utero may be associated with a markedly elevated maternal serum hCG level as well as transitory isolated fetal ascites. However, such associations can be coincidental and further collaborative studies and cases will be necessary before it can be determined that a disproportionately elevated hCG level and transitory isolated fetal ascites are predictive of CMTC in utero.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2133.1997.d01-1185.x
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  • 5
    Electronic Resource
    Electronic Resource
    Exciton binding energies in GaInAs/InP quantum wells determined by thermally modulated photoluminescence (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1590-1592 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atmospheric pressure organometallic vapor phase epitaxy has been used for the growth of single InP/GaInAs/InP quantum wells with atomically abrupt interfaces. This has allowed wells as thin as 10 A(ring) to be grown which give sharp photoluminescence (PL) spectra at 10 K. PL and thermally modulated PL have been used to distinguish band-to-band and exciton luminescence transitions allowing an estimation of the exciton binding energy. For the first time, the qualitative trend of an increase in exciton binding energy with decreasing well width for thick wells followed by a distinct maximum and a sharp decrease in binding energy with decreasing well width for very thin wells has been observed. The maximum binding energy of approximately 17 meV is found to occur for a nominal well width of approximately 13 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99090
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  • 6
    Electronic Resource
    Electronic Resource
    Transmission electron microscope characterization of AlGaInP grown by organometallic vapor phase epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1463-1465 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlGaInP epitaxial layers grown at 690 °C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the {111} directions. The ordered regions appear as plate-like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan-view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of the AlGaInP epitaxial layers and, finally, forms the columnar structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102499
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  • 7
    Electronic Resource
    Electronic Resource
    Atomic steps at GaInAs/InP interfaces grown by organometallic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 290-292 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InP/GaInAs/InP quantum well structures have been grown using atmospheric pressure organometallic vapor phase epitaxy (OMVPE). For thin wells the 10 K photoluminescence spectra show a clearly resolved doublet (or in some cases a triplet). The energy separation of the two peaks increase with decreasing well width down to a nominal width of approximately two to three atomic monolayers. For thinner wells the energy separation decreases with decreasing well width. The doublet is interpreted as being due to the photoluminescence from two wells differing in thickness by a single monolayer. A simple calculation for a finite quantum well describes the general features of the energy splitting versus well width. The half-widths of the two photoluminescence peaks for the thin wells, where the two peaks are resolved, are extremely narrow. The value of 〈15 meV for the thinnest well is much better than observed previously for low-pressure or atmospheric-pressure OMVPE and matches the results obtained by chemical beam epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99652
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  • 8
    Electronic Resource
    Electronic Resource
    Current-voltage and capacitance-voltage behavior of high-resistivity (AlxGa1−x)yIn1−yP on GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 650-652 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Unintentionally doped layers of (AlxGa1−x)y In1−y P with energy gaps of approximately 2.0 eV were grown lattice matched to GaAs by organometallic vapor phase epitaxy. These layers were high resistivity. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were made on Cr/Au (AlxGa1−x)y In1−y P-GaAs metal-insulator-semiconductor capacitors. These measurements gave a ln I variation with V1/2 as observed for insulators such as Si3N4 on Si. This conduction behavior is characteristic of the Frenkel–Poole effect which is the electric field enhanced thermal excitation of trapped electrons into the conduction band. The C-V measurements were similar to the small hysteresis behavior of high-resistivity oxygen-doped AlxGa1−xAs on GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100907
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  • 9
    Electronic Resource
    Electronic Resource
    Atomic steps in thin GaInAs/lnP quantum-well structures grown by organometallic vapor phase epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2674-2680 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InP/GaInAs/InP quantum-well structures have been grown using atmospheric pressure organometallic vapor phase epitaxy (AP-OMVPE). The effects of growth parameters such as V/III ratio and substrate orientation have been studied. For thin wells the 10-K photoluminescence spectra show clearly resolved doublets or in some cases triplets. The energy separation of the peaks increases with decreasing well width down to a width of approximately 12 A(ring). For thinner wells the energy separation decreases with decreasing well width. The doublet is interpreted as being due to the photoluminescence from two wells differing in thickness by a single monolayer. A simple calculation for a finite quantum well describes the general features of the energy splitting versus well width. For the thin wells, where the individual photoluminescence peaks are resolved, the half-widths are extremely narrow. The value of 〈15 meV for the thinnest well is much better than observed previously for low pressure or AP-OMVPE and matches the results obtained by chemical beam epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341008
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  • 10
    Electronic Resource
    Electronic Resource
    Organometallic vapor phase epitaxial growth and characterization of GaInP/AlInP quantum wells on 10°-off GaAs substrates using ethyldimethylindium (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1007-1009 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaInP/AlInP quantum wells (QWs) have been grown on (100) and 10°-off (100) GaAs substrates in an organometallic vapor phase epitaxy (OMVPE) reactor at reduced pressure. Photoluminescence (PL) studies revealed an increase in peak energy and narrowing in linewidth for the 10°-off QWs, due to the suppression of the formation of ordered microstructures during the OMVPE process. Low temperature PL results of GaInP/AlInP QWs as thin as 13 A(ring) are presented for the first time. The 10°-off QW showed a dominant peak at 551 nm, the shortest wavelength ever reported in GaInP/AlInP QWs. The origin of PL for the 13-A(ring) QWs is, however, different from that for thicker QWs as a result of the transfer of electrons to localized states in the barrier layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106504
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