Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
71 (1997), S. 473-475
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Ultrathin (5–7 monolayers) nucleation layers of GaN are deposited on (2×4)-GaAs(001) by plasma-assisted molecular beam epitaxy. Reflection high-energy electron diffraction applied in situ reveals these layers to be epitaxial β-GaN. Transmission electron microscopy confirms this result and reveals in addition that the layers are highly connected and have an atomically abrupt interface to the GaAs substrate. The rms roughness of these layers, as measured by atomic force microscopy, is as low as 1.4 Å. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.119583
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