Bibliothek

feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6883-6887 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Raman scattering has been used to investigate the optical phonons in thick compositionally uniform epilayers of In1−xAlxSb (x〈0.65) grown by magnetron sputter epitaxy on (001)InSb. An analysis of the stress-induced changes in the frequencies of the two optical phonon modes found in the epilayers was performed, and the stress factors and phonon mode behaviors for bulk material were evaluated. It was found that some epilayers with low x values were coherently strained, even though their thicknesses far exceeded the mechanical-equilibrium critical thickness limit.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2181-2186 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The growth and optical band gaps of heteroepitaxial layers of the ternary In1−xGaxSb [0≤x≤1] on (100)GaAs is reported. The epilayers, prepared by metalorganic magnetron sputtering using trimethyindium, trimethylgallium, and a sputtered antimony beam, showed good structural and surface morphologies despite a lattice mismatch between substrate and epilayer of 9%–14%. Secondary ion mass spectrometry analysis indicated a background carbon level in proportion to the gallium concentration. The high levels of carbon were not present in the InSb layers prepared using TMI. All films showed optical absorptions characteristic of direct gap semiconductors. The bowing parameter for the system is somewhat lower than that observed for the corresponding bulk material and may be related to compressive stress in the layers.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5363-5365 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have examined epitaxial InSb films by Raman scattering for the first time. The films, 0.17–2.67 μm thick, were grown on (100) GaAs substrates by the new technique of metalorganic magnetron sputtering. We observe the first and second order longitudinal optical phonon peaks, the latter enhanced by outgoing resonance with the E1+Δ1 gap of InSb, and an upshift of this gap due to compressive biaxial stress. We also observe an anomalous dependence of stress on film thickness. The Raman data indicate good sample quality despite the large lattice mismatch between InSb and GaAs.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1650-1658 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A systematic series of hydrogenated amorphous silicon (a-Si:H films) has been deposited by the hot wire chemical vapor deposition (HWCVD) technique onto crystalline silicon substrates, and the H bonding has been examined by infrared spectroscopy. All deposition parameters were kept the same, except that the substrate temperature (TS) was varied to affect changes in the film H content. Although the peak position of the Si–H stretch mode changes minimally with increasing substrate temperature, the stretch mode shape changes, becoming more intense (compared to the height of the wag mode) and considerably narrower. We show, through annealing experiments, that this narrow stretch mode may be a universal feature of low H content films, and suggest interpretations for this finite (narrow) linewidth. By correlations with x-ray diffraction data, we also show that the narrowing of the stretch mode peak for low H content HWCVD films is an indication of improved lattice ordering, and suggest that this improved ordering might also exist for other types of low H content a-Si:H films as well. However, for the as-grown HWCVD films the narrowing of the stretch mode peak width at lower H contents does not completely compensate for the increase in peak height, and as a result the integrated intensity of the peak mode (relative to that of the wag mode) increases. We comment on the differences between as-grown, low H content a-Si:H HWCVD films and high H content films annealed to reduce the film H content to comparable levels, and discuss possible reasons for these intensity changes versus sample H content. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4142-4149 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The mechanism of the UV photoenhanced wet etching of GaN is determined. The UV photoenhanced wet etching does not require an electrical contact to be made to the sample, and nitrides deposited on insulating substrates (such as sapphire) can be etched, unlike photoelectrochemical (PEC) wet etching. The present technique relies on adding an appropriate oxidizing agent, in this case, peroxydisulfate (S2O82−), to KOH solutions. In a similar mechanism to PEC wet etching, the regions of low defect density are preferentially etched, leaving regions of high electron recombination such as threading dislocations relatively intact. The threading dislocations may be physically broken off, either by stirring or by a postetch sonication of the sample in KOH solution. Smoothly etched surfaces can be obtained under the proper conditions. A noble metal mask acts in a catalytic manner, yielding etch rates approximately one order of magnitude greater than those observed using inert masks. The essential role of the free radicals, originating from the peroxydisulfate ion, in the etching reaction is confirmed. The etching reaction is more rapid for more heavily n-type doped samples, and insulating C-doped layers act as an etch stop layer. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 6
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 103 (1996), S. 0 
    ISSN: 1471-0528
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 7
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Publishing Ltd
    Soil use and management 15 (1999), S. 0 
    ISSN: 1475-2743
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Geologie und Paläontologie , Land- und Forstwirtschaft, Gartenbau, Fischereiwirtschaft, Hauswirtschaft
    Notizen: Abstract. A lysimeter study from April 1993 to June 1997 assessed the effects of winter cover crops and unfertilized grass on both the volume of water draining over winter and the amounts of nitrate leached. There were three to five replicates of each treatment in a fully randomized design. The lysimeters were undisturbed monoliths of loamy medium sand, 1.2 m deep and 0.8 m diameter.There were six treatments: sown cover before spring-sown crops (SC), natural regeneration (‘tumbledown’) before spring-sown crops (T), unfertilized grass (UG), bare soil permanent fallow, (PF), winter barley (WB) and conventional overwinter fallow before spring-sown crops (WF). Sugarbeet replaced cereals in 1996 as a disease break, and in consequence no cover was established in SC and T in autumn 1996. Of the four years of the study, two were above-average rainfall, while two were of less than average rainfall. Results are only quoted if statistically significantly different from WB (P=0.10).Over the first winter, NO3―N losses were similar under UG (26 kg ha−1) and PF (29 kg ha−1), due to the slow establishment and growth of the grass. In the following three winters NO3―N losses under UG were small (c. 6 kg ha−1), giving an overall mean of c. 11 kg ha−1. Sown cover crops and T gave means of c. 16 and 22 kg ha−1 respectively, compared with c. 27–31 kg ha−1 under PF, WB and WF.Mean NO3―N concentrations were smallest under UG (4.4 mg l−1) and SC (10.6 mg l−1), although both T (13.7 mg l−1) and PF (12.4 mg l−1) were less than under WB and WF (15.8–18.7 mg l−1). Overwinter drainage was greatest from UG and PF, at 239 and 247 mm respectively. In the three winters that cover crops were grown, drainage was decreased by, on average, 30 mm year−1 compared with WF. However, there were large differences in effects between years, with significant decreases in only one year.We conclude that the widespread adoption of cover crops before spring-sown crops will reduce overwinter drainage in UK Nitrate Vulnerable Zones by no more than c. 2%, compared with no cover before spring-sown crops.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 8
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Publishing Ltd
    Soil use and management 18 (2002), S. 0 
    ISSN: 1475-2743
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Geologie und Paläontologie , Land- und Forstwirtschaft, Gartenbau, Fischereiwirtschaft, Hauswirtschaft
    Notizen: Abstract. This paper reviews current understanding of soil structure, the role of soil organic matter (SOM) in soil structure and evidence for or against better soil physical condition under organic farming. It also includes new data from farm case studies in the UK. Young SOM is especially important for soil structural development, improving ephemeral stability through fungal hyphae, extracellular polysaccharides, etc. Thus, to achieve aggregate stability and the advantages that this conveys, frequent input of fresh organic matter is required. Practices that add organic material are routinely a feature of organically farmed soils and the literature generally shows that, comparing like with like, organic farms had at least as good and sometimes better soil structure than conventionally managed farms. Our case studies confirmed this. In the reviewed papers, SOM was generally larger on the biodynamic/organic farms because of the organic additions and/or leys in the rotation. We can therefore hypothesize that, because it is especially the light fraction of SOM that is involved in soil structural development, soil structure will improve in a soil to which fresh organic residues are added regularly. Thus, we argue it is not the farming system per se that is important in promoting better physical condition, but the amount and quality of organic matter returned to a soil.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 9
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Publishing Ltd
    Soil use and management 17 (2001), S. 0 
    ISSN: 1475-2743
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Geologie und Paläontologie , Land- und Forstwirtschaft, Gartenbau, Fischereiwirtschaft, Hauswirtschaft
    Notizen: Abstract. Measures to reduce ammonia (NH3) emissions by incorporating livestock manures into the soil may increase the potential for nitrate (NO3-) leaching. The Manure Evaluation Routine (MANNER) model estimates the amount of N available to crops following livestock manure applications after calculating losses due to NH3 volatilization and NO3- leaching. The main objective of this study was to use the MANNER model to quantify the impact on NO3- leaching of introducing measures to reduce NH3 emissions, following application of livestock manures. The data produced were also used to make preliminary estimates of the likely effect of selected NH3 abatement techniques on the potential for nitrous oxide (N2O) emissions. At typical UK rates of application, the potential for increased NO3- leaching following either injection of slurry or rapid incorporation of solid manures was greatest for broiler/turkey manure (22–58 kg N ha–1) and least for straw-based cattle manure (6–10 kg N ha–1). The results suggest that in order to avoid substantially increasing the potential for NO3- leaching as a consequence of NH3 abatement, livestock manures should not be applied by low NH3 emission techniques prior to autumn-sown crops in the UK. Instead, low-emission applications should be made from October onwards to grassland and where possible, late autumn-sown combinable crops or to arable land which will be planted in the spring. However, in several areas of England and Wales there is currently insufficient land planted to spring crops on which to incorporate the livestock manures produced in those areas.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 10
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Inorganic chemistry 32 (1993), S. 4480-4482 
    ISSN: 1520-510X
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...