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  • 1
    Electronic Resource
    Electronic Resource
    Growth rate and quality variation of homoepitaxial diamond grown at elevated temperatures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 641-645 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial diamond films were grown at temperatures between 1000 and 1400 °C with an oxy-acetylene torch. The growth rates of the {100} and {111} faces were observed to increase through 1400 °C, while the {110} face did not grow above 1400 °C. The quality of all faces deteriorated significantly between 1300 and 1400 °C, as shown by scanning electron microscopy and Raman spectroscopy. The transparency of a film as measured by Fourier-transform infrared spectroscopy was type-IIa quality with very little C–H absorption.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359518
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Electronic properties of sol-gel-derived oxides on silicon (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1179-1181 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sol-gel-derived SiO2, borosilicate, and aluminosilicate thin films deposited on silicon and heated for 5 min at temperatures of 1000 °C or lower exhibit dielectric strength as great as 5 MV/cm and interface state densities as low as ∼1×1011/cm2 eV. These values represent significant improvements over previous sol-gel-derived oxides on semiconductors and indicate that sol-gel processing can provide device quality oxides in situations where native oxides are unavailable or exhibit poor dielectric behavior, e.g., amorphous, hydrogenated silicon or III-V compound semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98725
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  • 3
    Electronic Resource
    Electronic Resource
    Novel technique for growth-etch cycling of flame-deposited diamond films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2490-2492 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a novel technique for growth-etch cycling of diamond films deposited with an oxygen-acetylene torch, whereby a spinning wheel with removable teeth periodically disrupts the depositing flame in open atmosphere to allow air etching of a heated substrate. Cycling times as short as 0.02 s, with a growth/etch time ratio of approximately 19, have produced films with macro-Raman peak widths (full width at half-maximum) of approximately 3 cm−1. A predominance of large 100 crystal faces, with dimensions up to 300 μm, is evident in optimized films. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112647
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of hydrogen addition and growth-etch cycling on the oxy-acetylene torch deposition of homoepitaxial diamond (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1839-1840 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial diamond films were deposited onto (110) single crystal substrates using oxy-acetylene torch deposition at a constant substrate temperature of 1150 °C. Growth-etch cycling of the deposition increased the linear growth rates of the (100) and (111) faces by a factor of 2. The growth-etch films were shown to be less transparent in the infrared than the reference depositions as determined by microfocus Fourier transform infrared spectroscopy. Using the growth-etch technique, the growth rates of the (100), (111), and (110) faces decreased with increasing hydrogen addition to the combustion flame for hydrogen flow rates up to 50% of the acetylene flow rate. The additional hydrogen did not improve the growth-etch films' transparency. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115420
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    Paper (German National Licenses)
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