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  • 1
    Electronic Resource
    Electronic Resource
    Inducing normally forbidden transitions within the conduction band of GaAs quantum wells (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 366-368 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Six heretofore unobserved envelope state transitions within the conduction band of an AlAs/GaAs quantum well are reported, two of which are forbidden in a symmetric quantum well. The highest energy transition is resonant with 2.86 μm wavelength light. These resonant energies and absorption strengths agree with predictions based on a many-body theory of electrons in nonparabolic energy bands. A new type of infrared modulator is possible via absorption changes in the "forbidden'' transition between the first and the third conduction subbands.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103693
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Oxygen contamination of low temperature ultrahigh vacuum-deposited Ge films on GaAs (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 556-558 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Fourier transform infrared absorption spectrum for the range of 500–4000 cm−1 wave numbers was measured for several Ge films deposited on GaAs using ultrahigh vacuum e-beam deposition at various substrate temperatures ranging from room temperature (RT) to 500 °C. Spectra indicate oxygen incorporation at low deposition temperatures whether or not the native oxide was removed from the substrate prior to film deposition. Using transmission electron microscopy, we show that Ge films deposited at RT and 100 °C on a (100) GaAs surface that did not have the oxides removed are amorphous while those deposited at 100 °C with the oxide removed are crystalline, but are highly defective. Secondary ion mass spectroscopy (SIMS) measurements show that the amorphous films at RT contain more than two orders of magnitude more oxygen than the films deposited at 100 °C or a single crystal film deposited at 400 °C. Oxygen-18 diffusion studies definitively show that the excess oxygen in the amorphous films percolates in from the atmosphere. SIMS studies further reveal that thermally removing the GaAs substrate surface oxide or depositing an Au film on top of the Ge film has little effect on the incorporation of oxygen. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117785
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Optical transitions to above-barrier quasibound states in asymmetric semiconductor heterostructures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1432-1434 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An asymmetric semiconductor electron wave Fabry–Perot interference filter has been designed with two above-barrier quasibound states for optical transitions. The upper state was designed to have a spatial confinement lifetime greater than three times that of the lower state (which was designed to be less than 100 fs). Such lifetime ratios and magnitudes, which are nearly impossible for below-barrier states, satisfy the criteria required for achieving population inversion. Furthermore, the transitions were designed to have large dipole matrix elements. Absorption measurements at multiple temperatures were used to demonstrate the first bound-to-quasibound transitions in an asymmetric structure. The experimental energies and dipole matrix elements are in agreement with calculated values. This type of structure could represent the basis for a new room-temperature infrared semiconductor laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108651
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    Paper (German National Licenses)
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