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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 22 (1989), S. 4477-4483 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 23 (1983), S. 1025-1028 
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Deep UV[200 to 300 nanometers (nm)] photolithography has received much recent attention because it promises higher resolution than conventional exposure technology. Except for the change in wavelength from the 400 nm region, the exposure technology would remain virtually unchanged. We will discuss resist materials and processes explored in the last few years for optimization of deep UV lithography. Particular emphasis is placed upon the chemistry of resist design, multilevel processing schemes, and new sources for deep UV exposure.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 23 (1983), S. 1039-1042 
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Bilevel resist processing techniques, offering the advantage of forming images on a planar substrate, and thus improving the resolution capability of optical projection printers are discussed. After careful consideration of such materials characteristics as UV absorption, solubility, compatibility, and Tg, practical schemes can be developed, the simplest of which is one that uses conventional novolak-quinone diazide positive resists as the top masking layer and short wavelength sensitive methacrylate based resists to planarize the substrate. Sub-micron resolution and excellent line-width control are achieved in these systems.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    New York : Wiley-Blackwell
    Journal of Polymer Science: Polymer Chemistry Edition 20 (1982), S. 2661-2668 
    ISSN: 0360-6376
    Keywords: Physics ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Copolymers of methyl methacrylate and 3-oximino-2-butanone methacrylate (OM) were investigated as deep-UV and e-beam resists. Their increased sensitivity relative to PMMA (up to 50 times) was correlated with the radiation chemical yields of the volatile products and main chain scissions. The degradation of these copolymers, activated by the 3-oximino-2-butanone entity, is discussed in terms of energy absorption mechanisms and the subsequent scission reactions.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    New York : Wiley-Blackwell
    Journal of Polymer Science: Polymer Chemistry Edition 21 (1983), S. 1075-1083 
    ISSN: 0360-6376
    Keywords: Physics ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Ortho-nitrobenzyl cholate esters have been successfully used as photosensitive components in solution inhibition deep UV photoresists. The photochemical behavior of a variety of substituted o-nitrobenzyl cholate derivaties has been examined and resist sensitivity is related to the quantum yield of the reaction. The most efficient system examined is o, o′-dinitrobenzyl cholate/P(MMA-MMA), where the quantum yield of photoreaction is 0.2 and resist sensitivity is ca. 150 mJ/cm2 for a 1.5 μm film. The mode of resist behaviour on irradiation and development is also reported.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
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