Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 2702-2704
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si doping in the emitter and collector regions was grown by metalorganic chemical vapor deposition on c-axis Al2O3. Secondary ion mass spectrometry measurements showed no increase in the O concentration (2–3×1018 cm−3) in the AlGaN emitter and fairly low levels of C (∼4–5×1017 cm−3) throughout the structure. Due to the nonohmic behavior of the base contact at room temperature, the current gain of large area (∼90 μm diameter) devices was 〈3. Increasing the device operating temperature led to higher ionization fractions of the Mg acceptors in the base, and current gains of ∼10 were obtained at 300 °C. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123942
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