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  • 1
    Electronic Resource
    Electronic Resource
    Effect of annealing on the optical properties of HgTe-CdTe superlattices (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 969-971 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: HgTe-CdTe superlattices of high crystalline quality, and with negligible interdiffusion, have been successfully grown at low substrate temperatures (150–170 °C) by molecular beam epitaxy. Optical spectra exhibiting multiple steplike absorption edge features have been measured on as-grown and thermally annealed samples. The data provide valuable information on the superlattice subband structure when coupled with a suitable model. These results then can be used to obtain semiquantitative measures of layer interdiffusion along with such quantities as valence-band offset and strain. To observe subband structure in the optical data, it is necessary to fabricate samples having homogeneous HgTe and CdTe layer thicknesses in the superlattice growth direction. Homogeneity of layers was achieved by carefully controlling elemental source fluxes and shutter times during the epitaxial growth process. Substantial changes in the subband-related absorption structure could be induced by annealing the superlattice samples at temperatures just slightly above the growth temperature. An observed shift of the fundamental absorption edge to higher energy, as well as an apparent broadening of the subband absorption structure upon annealing, can be explained by interdiffusion of HgTe and CdTe layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99244
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  • 2
    Electronic Resource
    Electronic Resource
    CdTe photoluminescence in HgTe-CdTe superlattices (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1516-1518 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report photoluminescence in HgTe-CdTe superlattices that originates in the CdTe layers. We see a near-band-gap line at 1.493 eV, which demonstrates that strain and Hg-Cd substitutional diffusion are small in the CdTe layers. In addition, a deep-level line at 0.775 eV, possibly due to recombination along dislocation lines, is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339614
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  • 3
    Electronic Resource
    Electronic Resource
    Deep-level photoluminescence spectroscopy of CdTe grown by molecular-beam epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2670-2671 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of a broad photoluminescence line at 0.75 eV in CdTe grown by molecular-beam epitaxy at both high- and low-substrate temperatures. This line is in excellent agreement with the E2 line observed by deep-level transient spectroscopy by previous workers. The origin of both of these lines is probably a deep defect or impurity level native to CdTe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337898
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  • 4
    Electronic Resource
    Electronic Resource
    Controlled p-type impurity doping of HgTe-CdTe superlattices during molecular-beam-epitaxial growth (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1550-1553 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report identification of a reliable p-type impurity dopant that can be used during molecular-beam-epitaxial (MBE) growth of HgTe-CdTe superlattices. Silver doping during the epitaxial growth of (100)-oriented HgTe-CdTe superlattices is shown to yield reproducible hole concentrations in the range of 1016–1018 cm−3. When normalized by the growth rate, the hole concentrations show an exponential dependence on the temperature of the Ag effusion cell. The diffusion of Ag in step-doped junctions was studied by use of secondary-ion mass spectrometry. The diffusion coefficient of Ag at the low MBE growth temperatures was found to be in the range of (1–5)×10−13 cm2/s. These values are comparable to recently reported values in MBE-grown (Hg,Cd)Te alloys and suggest that strain does not produce any new diffusion paths in the superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342971
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  • 5
    Electronic Resource
    Electronic Resource
    p-on-n heterojunctions of (Hg,Cd)Te by molecular-beam epitaxy: Controlled silver doping and compositional grading (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1951-1954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two important quantities in determining the electrical properties of a heterojunction are the dopant and compositional grading profiles. Although molecular-beam epitaxy (MBE) has been used to grow high-quality layers of (Hg,Cd)Te, there has been no report of attempts to control these important quantities by use of conventional MBE growth techniques. We report the identification of a reliable p-type impurity dopant that can be used for MBE-(Hg,Cd)Te and we demonstrate, by use of secondary-ion mass spectroscopy, that conventional MBE growth techniques can be used with silver to produce the required dopant and compositional grading profiles to fabricate p-on-n heterojunctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341092
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