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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 6116-6121 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the magnetic hysteresis loops of an epitaxial YBa2Cu3O7−δ thin film using our recently developed device which can provide the field magnitude in the range of 0–1000 Oe and the field sweep rate up to 107 Oe/s. The shape of the hysteresis loop measured changes with the field-sweep rate up to the critical sweep rate; and over the critical sweep rate the ac magnetization reaches its real critical state where magnetization does not change even with a further increase in the field-sweep rate. The critical sweep rate is about 106 Oe/s at 77 K. With the hysteresis loops and Bean model, we have calculated the magnetization critical current density (Jcac) which is consistent with that obtained by I–V measurements. We have also studied flux motion and activation energy under the high sweep rate magnetic field. At temperature 77 K, the velocity of the flux motion is of the order 10 m/s and the pinning energy U0/k is about 339 K which is much smaller than the magnetization decay measurement. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Journal of superconductivity 11 (1998), S. 291-296 
    ISSN: 1572-9605
    Keywords: Surface impedance of high-T c superconductor ; thin films ; penetration depth ; critical current
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract This paper defines an effective microwave surface resistance $$R_{\text{s}}^{{\text{eff}}}$$ for the nonuniform distribution of microwave surface resistance R s in the strip of a microstrip. It is proved that $$R_{\text{s}}^{{\text{eff}}}$$ is equivalent to the expression of R s used in experiments, and that the $$R_{\text{s}}^{{\text{eff}}}$$ is dominated by the edge part, i.e., the area of width λ2/2t from the strip edge, where λ is the magnetic penetration depth and t is the film thickness. Under the assumption that $$R_s \sim \left( {H_{{\text{rf}}}^y } \right)^n$$ where $$H_{{\text{rf}}}^y$$ is the component of rf magnetic field along the film thickness and n is an integer, the ratio of the contributions of the edge part and the rest of the strip to $$R_s^{{\text{eff}}}$$ is calculated by using an approximate analytical expression of the surface current density distribution J s in the strip and $$H_{{\text{rf}}}^y$$ calculated by the London equation. The effect of film's edge on R s was studied using a microstrip resonator. It is found that the perfectness of the edge could affect the magnitude of the power dependence of R s significantly, which agreed with our analysis.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1572-9605
    Keywords: Microstrip resonator ; edge effect ; high-T c superconductor
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A new behavior of the field dependence of microwave surface resistance (R s), which was observed on a microstrip resonator and may be caused by the edge of the center strip, is reported in this paper for epitaxial high-T c superconducting (HTSC) thin films. The exhibited behavior is that R s remains almost unchanged below a certain rf magnetic field H rf, and then increases abruptly at this field, after which it increases in proportion to H rf. To explain the behavior, the morphology of the microstrip resonator was examined by atomic force microscopy (AFM), which showed that the edge of the resonator was damaged in some regions because of the acid etching. If the damaged edge is considered as a weakened granular superconductor, the observed R s behavior could be explained well in terms of the high-frequency critical state model. This implies that the edge condition should be considered in studying the field dependence of R s when the planar resonator technique is used.
    Type of Medium: Electronic Resource
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