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  • 1
    Electronic Resource
    Electronic Resource
    Effects of postannealing on the electrical properties of Ta2O5 thin films deposited on TiN/T (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7242-7248 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of postannealing on the structural and leakage current characteristics of Ta2O5 thin films deposited on a TiN/Ti bottom electrode by chemical-vapor deposition at 350 °C were investigated. The Ta2O5 film of 50 nm thickness shows an amorphous phase and smooth surface morphology after annealing in N2O plasma at 350 °C, but the film treated with rapid thermal annealing in nitrogen (RTN) at 750 °C prior to N2O plasma annealing at 350 °C has an orthorhombic structure and rugged surface morphology. In addition, the TiSi phase also appears in the specimen of RTN-treated Ta2O5 film. Moreover, the residual carbon can be effectively eliminated and the oxygen deficiency can be well compensated by the N2O plasma annealing for both amorphous and crystalline Ta2O5 films. The I–V relation of the amorphous Ta2O5 films is asymmetric with respect to the biasing polarity, which indicates that the leakage current is primarily dominated by the Schottky emission. On the other hand, the crystalline Ta2O5 film has a symmetrical I–V relation, suggesting that the non-Ohmic leakage in the crystalline Ta2O5 film is related to the Poole–Frenkel effect. The barrier heights cursive-phiB for the non-Ohmic leakage in the amorphous and crystalline Ta2O5 films, as evaluated from the temperature dependence of the I–V relation, are 0.52 and 0.82 eV, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326464
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  • 2
    Electronic Resource
    Electronic Resource
    X-ray absorption spectroscopic studies of sputter-deposited LaNiO3 thin films on Si substrate (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2175-2180 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray absorption spectroscopy (XAS) was applied to investigate the growth behavior of LaNiO3 thin films on Si substrate deposited via radio frequency magnetron sputtering at high temperature. The thickness of deposited film was always proportional to the sputtering time. However, the Ni-to-La ratio in the film was found to decrease with increasing substrate temperature. It is due to a loss of Ni on high-temperature deposition which lowers the film growth rate and leads to a gradual structural change. Nevertheless, the oxidation states of both Ni atom and La atom in the thin films were not influenced by the substrate temperature or sputtering time. All the XAS evidence was consistent with the results from x-ray reflectivity, x-ray diffraction, and chemical analysis. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363109
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  • 3
    Electronic Resource
    Electronic Resource
    Non-ohmic characteristics of ZnO-V2O5 ceramics (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4817-4822 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The densification behavior, microstructure, and electrical properties of ZnO-V2O5 ceramics were studied with V2O5 as the only additive ranging from 0.01 to 1.0 mol %. The addition of V2O5 to zinc oxide shows a tendency to enhance the densification rate and promote grain growth. However, a microstructure that consisted of anomalously grown grains was found for the specimens containing V2O5≥0.05 mol % when sintered at 1100 °C for 2 h. The x-ray diffraction and SEM-EDS microanalysis revealed that the sintered specimens had a two-phase microstructure, i.e., a vanadium-rich intergranular phase formed between ZnO grains. The formation of the grain boundary barrier layer was confirmed by the non-ohmic I-V behavior and the quick drop of apparent dielectric constant with increasing frequency of the ceramics. A nonlinearity coefficient of 2.4–2.8 was obtained at a current density of 10 mA/cm2 for a series ZnO-V2O5 ceramics, and a Schottky barrier height of 0.44–0.47 eV (at 25 °C) was determined from the I-V and C-V experimental data, based on the thermionic emission theory, and the model of back-to-back double Schottky barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357254
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of textured LaNiO3 electrode on the fatigue improvement of Pb(Zr0.53Ti0.47)O3 thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1430-1432 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By changing the electrode combination of Pt and LaNiO3 (LNO), four capacitor types of Pt/PZT/Pt/Si, Pt/LNO/PZT/Pt/Si, Pt/LNO/PZT/LNO/Pt/Si, and Pt/PZT/LNO/Pt/Si, were prepared to investigate the fatigue and hysteresis characteristics of the sol-gel-derived Pb(Zr0.53Ti0.47)O3 (PZT) ferroelectric thin films. Among them, the (100)- and (001)-oriented PZT films were grown on the (100)-textured LNO electrode, but randomly oriented films were obtained on the Pt electrode. It was found that the use of LNO bottom electrode would improve the fatigue property quite significantly, but only the capacitor with LNO as both top and bottom electrodes is shown to be fatigue-free up to 1011 cycles, and the shapes of the hysteresis loop almost unchanged after the fatigue test. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116103
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  • 5
    Electronic Resource
    Electronic Resource
    Preparation of (100)-oriented metallic LaNiO3 thin films on Si substrates by radio frequency magnetron sputtering for the growth of textured Pb(Zr0.53Ti0.47)O3 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2643-2645 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly (100)-oriented LaNiO3(LNO) thin films were grown on Si, SiO2/Si, Pt/SiSiO2/Si, as well as glass substrates by rf magnetron sputtering deposition at substrate temperatures ranging from 150 to 500 °C. As-deposited LNO films are metallic; those prepared at substrate temperature ∼150–250 °C have a resistivity of 0.4–0.5 mΩ cm and can be used as the bottom electrode for the fabrication of integrated ferroelectric capacitors on Si. A subsequent deposition of sol-gel derived Pb(Zr0.53Ti0.47)O3 (PZT) thin film on the LNO-coated substrate was also found to have a significant (100)- and (001)-oriented texture. The ferroelectric capacitor fabricated from these films displays a good P–E hysteresis characteristic. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113111
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of Calcium Substitution on the Structural and Microwave Dielectric Characteristics of [(Pb1−xCax)1/2La1/2](Mg1/2Nb1/2)O3 Ceramics (2001)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 84 (2001), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The effects of calcium substitution on the structural and microwave dielectric characteristics of [(Pb1−xCax)1/2La1/2](Mg1/2Nb1/2)O3 ceramics (with x= 0.01–0.5) were investigated. All the materials were observed to have an ordered A(B1/2′B1/2″)O3-type perovskite structure; however, the space group of the structure changed from Fm3m to Pa3 as the calcium content increased to x= 0.1, and then from Pa3 to R3¯ at the x= 0.5 composition. During the structural evolution, the lattice parameter of the perovskite cell decreased linearly, and the dielectric constant (k) also decreased, from k= 80 to k= 38. However, the product of the quality factor and the resonant frequency (Q×f) increased from 50 000 GHz to 90 000 GHz as the calcium content increased. Also, the temperature coefficient of resonant frequency (τƒ) gradually changed from 120 ppm/°C to −40 ppm/°C as the calcium content increased. At the x= 0.3 composition, a combination of properties—k∼ 50, Q×f∼ 86 000 GHz, and τƒ∼ 0 ppm/°C—can be obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2001.tb00831.x
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  • 7
    Electronic Resource
    Electronic Resource
    Characteristics of Sputtered Lead Barium Zirconate Thin Films (2001)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 214-215 (July 2001), p. 133-138 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/46/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.214-215.133.pdf
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