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  • 1
    Electronic Resource
    Electronic Resource
    Oxygen on the (100) CdTe surface (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7385-7388 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated oxygen on CdTe substrates by means of x-ray photoelectron spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED). A Te oxide layer that was at least 15 A(ring) thick was found on the surface of as-delivered CdTe substrates that were mechanically polished. This oxide is not easily evaporated at temperatures lower than 350 °C. Furthermore, heating in air, which further oxidizes the CdTe layer, should be avoided. Etching with HCl acid (15% HCl) for at least 20 s and then rinsing with de-ionized water reduces the Te oxide layer on the surface down to 4% of a monoatomic layer. However, according to XPS measurements of the O 1s peak, 20%–30% of a monoatomic layer of oxygen remains on the surface, which can be eliminated by heating at temperatures ranging between 300 and 340 °C. The RHEED patterns for a molecular beam epitaxially (MBE)-grown CdTe film on a (100) CdTe substrate with approximately one monoatomic layer of oxidized Te on the surface lose the characteristics of the normal RHEED patterns for a MBE-grown CdTe film on an oxygen-free CdTe substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354096
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  • 2
    Electronic Resource
    Electronic Resource
    The effects of laser illumination and high energy electrons on molecular-beam epitaxial growth of CdTe (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 268-272 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of a detailed investigation on the Te-stabilized (2×1) and the Cd-stabilized c(2×2) surfaces of (100) CdTe substrates. The investigation demonstrates for the first time that both laser illumination and, to a greater extent, high-energy electron irradiation increase the Te desorption and reduce the Cd desorption from (100) CdTe surfaces. Thus it is possible by choosing the proper growth temperature and photon or electron fluxes to change the surface reconstruction from the normally Te-stabilized to a Cd-stabilized phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347706
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  • 3
    Electronic Resource
    Electronic Resource
    Investigation of molecular-beam epitaxially grown CdTe on GaAs by x-ray photoelectron spectroscopy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 212-217 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy studies of CdTe-GaAs interfaces are reported. The growth start of CdTe on GaAs can be nearly stoichiometric if convenient growth parameters are chosen. The valence-band offset between these two materials is found to be large (470 meV). Cd-Te-metal-GaAs multilayers have been grown with very thin metal films. The CdTe-GaAs band offset is not influenced by such intermediary metal layers. The experimentally obtained value for the valence-band offset is compared with recent theoretical calculations taking into account interface dipoles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347118
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  • 4
    Electronic Resource
    Electronic Resource
    Investigation of CdTe surfaces by x-ray photoelectron spectroscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2662-2664 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of different CdTe substrate preheats prior to II-VI molecular beam epitaxial growth on surface stoichiometry and oxygen contamination has been studied using x-ray photoelectron spectroscopy. For 15 min preheats with temperatures ranging from 100 to 450 °C, the cadmium to tellurium ratio and the oxide overlayer thickness of (100) CdTe surfaces was determined. A preheat temperature of 200 °C is found to produce optimum stoichiometry. For lower temperatures the CdTe surface is still tellurium rich, as left after etching with bromine-methanol. For higher temperatures, cadmium evaporates faster than tellurium, leaving again a tellurium-rich surface. The oxygen contamination remains nearly unchanged for temperatures below 250 °C. Oxygen starts to blow off for preheat temperatures above 250 °C, with a steep decrease between 250 and 350 °C. For preheat temperatures higher than 350 °C, the oxygen contamination drops below the detection limit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101028
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of wafer thermostability and wafer-holding materials on optical loss in GaAs annealing (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5552-5554 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A periodic structure of bonded GaAs wafers has been proposed for quasi-phase-matched second-harmonic generation. However, current bonding processes used to fabricate these structures often lead to unacceptably high optical losses. When commercial semi-insulating GaAs wafers were bonded at 850 °C, increases in the free-hole concentration (thermal conversion) were found to be a major cause of excess optical loss. This conversion depended on both the GaAs source and the materials comprising the sample holder. We found that quartz and sapphire could not be used in contact with GaAs wafers because they stuck during the bonding process. On the other hand, As-charged graphite holders did not stick and worked well under our bonding conditions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367388
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  • 6
    Electronic Resource
    Electronic Resource
    High-mobility CdTe films grown by molecular beam epitaxy with excess Cd (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1754-1756 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fact that n-type conducting CdTe can be grown by molecular beam epitaxy (MBE) with excess Cd flux and show for the first time details of the CdTe/Cd surface phase reconstruction diagram.The surface phase diagram has been mapped over the substrate temperature range 180–375 °C using Cd/CdTe ratios between 0.0 and 1.0. At low Cd/CdTe ratios and high temperatures a (2×1) reconstruction is observed and at high Cd/CdTe flux ratios we observe a c(2×2) reconstruction. We have also observed a strong influence of substrate illumination on the surface reconstruction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104057
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  • 7
    Electronic Resource
    Electronic Resource
    Surface sublimation of zinc blende CdTe (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1510-1512 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface sublimation of Cd and Te atoms from the zinc blende (111)A CdTe surface has been investigated in detail by reflection high energy electron diffraction and x-ray photoelectron spectroscopy. These experiments verify that Te is much easier to evaporate than Cd. The experimental value for the Te activation energy from a Te stabilized (111)A CdTe surface is 1.41±0.10 eV, which is apparently inconsistent with recent theoretical results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108623
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  • 8
    Electronic Resource
    Electronic Resource
    Thermal effects on (100) CdZnTe substrates as studied by x-ray photoelectron spectroscopy and reflection high energy electron diffraction (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1878-1880 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of different CdZnTe substrate treatments prior to II-VI molecular beam epitaxial growth on surface stoichiometry, oxygen, and carbon contamination has been studied using x-ray photoelectron spectroscopy and reflection high energy electron diffraction. Heating the substrate at 300 °C can eliminate oxygen contamination, but cannot completely remove carbon from the surface. Heating at higher temperatures decreases the carbon contamination only slightly, while increasing the Zn–Cd ratio on the surface considerably. The magnitude of the latter effect is surprising and is crucial when one is using lattice matched CdZnTe (Zn 4%) substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107141
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  • 9
    Electronic Resource
    Electronic Resource
    Comparison of Moments, S-Plane, and Frequency Response Methods for Analyzing Pulse Testing Data from Flow Systems (1971)
    s.l. : American Chemical Society
    Industrial and engineering chemistry 10 (1971), S. 425-431 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/i260040a001
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of process pressure on the growth of hydrocarbon films under direct dc bias in an electron cyclotron resonance plasma (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5277-5282 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of pressure on the deposition of hydrogenated amorphous carbon (a-C:H) thin films using the electron cyclotron resonance chemical vapor deposition (ECR-CVD) technique are reported. In this study, the ions were accelerated under a constant direct dc bias achieved through a screen grid positioned above the substrate. The deposition pressure was varied to study its effects on the plasma environment under the ECR conditions and also on the properties of the films deposited. It was found that changing the process pressure has a very significant effect on the properties of the films deposited. The hardness and the optical gap of the films were noted to increase with pressure. The sp3 content in the films, as deduced from their Raman spectra, was also observed to increase. The results obtained in this study show that the plasma chemistry, in addition to the ion energy, plays a very significant role in determining the properties of the films deposited. The denser plasma created under the ECR condition at higher pressure, accompanied by the presence of a relatively large amount of atomic hydrogen resulting in enhanced plasma etching of the films, is believed to lead to the results observed. Comparisons have also been made between films deposited under rf induced bias and direct dc bias in the ECR-CVD system. The difference in the characteristics observed can be attributed to the narrower ion energy distribution in the case of direct dc bias. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368815
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