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  • 1
    Electronic Resource
    Electronic Resource
    Optical parameters and luminescent properties of Nd:GdVO4 crystals (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4433-4436 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on the quantum electrodynamics and using Einstein's coefficient and Planck's energy density, the stimulated emission cross section was given. The measured absorption of 0.5 at. % Nd-doped Nd:GdVO4 crystal was compared to the Judd–Ofelt (JO) theory. When applied, the JO theory of parity-forbidden electric–dipole transitions of rare-earth ions on noncentrosymmetric site lacking inversion symmetry demonstrates good agreement. An absorption band around 808 nm is suitable to match laser diode pumping. The branching ratio of the fluorescence emission and stimulated emission cross section at the emissive wavelength of 1064 nm are of great advantage to produce a laser output. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1407307
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  • 2
    Electronic Resource
    Electronic Resource
    Spectral parameters of Nd-doped yttrium orthovanadate crystals (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5134-5137 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nd-doped yttrium orthovanadate (Nd:YVO4, abbreviated as NYV) crystal has been grown using a modified Czochralski method. Its main structural parameters and optical and laser properties are all presented. The absorption spectrum of Nd3+ ions doped in NYV in a wavelength range from 190 to 900 nm and that of free Nd3+ ions in HCl solution of 0.2 mol in the range of 190–900 nm have both been measured. The width of the absorption band around 808 nm to match the laser diode pumping is about 28 nm, which is approximately three times broader than that of Nd-doped yttrium aluminum garnet crystal. The line intensity of the absorption spectrum of NYV has been calculated. The calculated luminescence parameters of NYV are also listed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1314331
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  • 3
    Electronic Resource
    Electronic Resource
    The use of area detectors in Brillouin spectroscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 2727-2731 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The optical properties of area detectors used in conjunction with Fabry–Pérot interferometers are analyzed. A system using a charge-coupled device as a detector for Brillouin spectroscopy is described. With a 2 pass+2 pass tandem system the finesse ranges from 50 to 63. With a collection time of about 2.5 min, the intensity of the surface Rayleigh mode and the bulk acoustic modes of Si are comparable to those obtained by scanning for many hours. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147101
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  • 4
    Electronic Resource
    Electronic Resource
    Raman scattering study of the longitudinal optical phonons in ZnSe–ZnS strained-layer superlattices (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4270-4272 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering studies were performed on ZnSe–ZnS strained-layer superlattices with different strains. In the optical phonon regime, the Raman spectra of the ZnSe–ZnS superlattices with a superlattice axis along [001] show optical phonons confined in the ZnSe well and ZnS barrier layers, and display a two-mode behavior corresponding to ZnSe-like and ZnS-like modes. We report the experimental results, by means of Raman scattering of confined longitudinal optical phonons in ZnSe–ZnS strained-layer superlattices. The Raman frequency shift dependence on the layer thickness, superlattice period, and interface strain is presented and discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360706
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  • 5
    Electronic Resource
    Electronic Resource
    Brillouin scattering from surface acoustic phonons in a ZnSe-ZnSe1−xSx strained-layer superlattice (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7619-7620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Brillouin scattering studies were performed on ZnSe-ZnSe1−xSx strained-layer superlattices with the composition x∼0.2. We have observed scattering from longitudinal guided modes (LGM) whose velocities are determined primarily by the C11 elastic constant. From the measured velocity of the first-order LGM of the quasitransverse acoustic mode and of the quasilongitudinal acoustic mode, the C11 and C44 elastic constants in ZnSe-ZnSe1−xSx superlattice film have been observed. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357929
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  • 6
    Electronic Resource
    Electronic Resource
    Sulphur diffusion at the Si/GaAs(110) interface (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4354-4357 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The depth distribution of sulphur near the Si/GaAs(110) interface has been measured using particle induced x-ray emission (PIXE) in conjunction with Rutherford backscattering spectrometry (RBS); ozone oxidation and a hydrofluoric acid step-etching technique were used for sequential removal of Si/GaAs atomic layers. The depth resolution was also calibrated via 16O(d,p)17O nuclear reaction analysis and x-ray photoemission spectroscopy. PIXE/RBS measurements found a half monolayer of sulphur on the H2Sx passivated GaAs(110) surface. Upon deposition of 15 A(ring) silicon on the S-passivated GaAs(110), the total amount of sulphur remained constant as compared to that before Si deposition. However, no orientated S–Ga bonds were detected via the x-ray absorption measurement and the depth profile revealed that the sulphur atoms diffused into both the GaAs substrate and the Si heterolayer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363393
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  • 7
    Electronic Resource
    Electronic Resource
    Polarization and dipole moments of Co-doped potassium sodium strontium barium niobate crystals (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4465-4468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystals of potassium sodium strontium barium niobate (KNSBN) and cobalt-modified KNSBN were prepared using the Czochralski technique. The ferroelectric hysteresis loops and the infrared reflectivity spectra were collected. Compared with the undoped KNSBN crystals, the cobalt-modified crystals have stable hysteresis loops, whose spontaneous polarization is about 0.17 C/m2 and coercive field strength is about 670 V/mm, but those of the undoped KNSBN crystals are about 0.04 C/m2 and 530 V/mm, respectively. The measured infrared reflectivities vary with the orientations of the dipole moments owing to the Co doping. The c axis becomes the most stable orientation of the dipole moments, and the polarization can be locked and does not recede when the cobalt-modified crystals are polarized into a single domain. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366178
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  • 8
    Electronic Resource
    Electronic Resource
    Energy state of Nd3+ doped in barium sodium niobate crystals (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2560-2562 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nd-doped barium sodium niobate (Ba2Na)1−xNdxNb5O15 (BNN:Nd), with x=0.025 and a Curie temperature of 537±2 °C, crystallizes with a filled tungsten bronze-type structure in the tetragonal system. The lattice constants are a=b=1.2446(1) and c=0.3991(1) nm at room temperature. There are two formulas per unit cell. The five typical deep energy levels, formed by the Nd3+ ions doped in the A1 and A2 sites, are 2.36, 2.12, 1.68, 1.55, and 1.43 eV. Investigating the green and yellow second-harmonic generation shows that the BNN:Nd crystal can be expected as a useful material for the green, especially for the yellow laser radiation at room temperature. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367016
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  • 9
    Electronic Resource
    Electronic Resource
    Elastic properties of nanocrystalline zirconium–silicon–boron thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4349-4353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin amorphous films of ZrB3 grown on Si(111) substrates by chemical-vapor deposition are, upon annealing at 960 °C, transformed to films composed of nanocrystallites (6–10 nm extent) with a nominal composition of Zr0.9Si0.3B3. The independent elastic constants of the layers are determined from the dispersion of the surface and pseudo-Sezawa acoustic excitations and reveal large enhancements in the C11 and C44 constants accompanying the conversion of ZrB3 to the nanocrystalline phase. Since the transverse sound velocities of the binary and Zr0.9Si0.3B3 are in near resonance with the sound velocity of Si (VTSi=4.8 km/s), only the Rayleigh surface wave is localized to the film while all higher-order acoustic modes are evanescent. Despite the strong decay channels, high-lying excitations with velocities as large as 25 km/s ((very-much-greater-than)VTSi) are observed in Brillouin light scattering. Insight into these acoustic properties is provided by evaluating the elastodynamic Green's functions and associated acoustic-mode densities. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1354632
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  • 10
    Electronic Resource
    Electronic Resource
    Raman spectra and laser properties of Yb-doped yttrium orthovanadate crystals (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 269-273 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Yb-doped yttrium orthovanadate YbxY1−xVO4 (YYV), with x=0.02, crystallizes with a zircon-type structure in the tetragonal system, conforming to the space group I41/amd. The lattice constants are a=0.7122(5) and c=0.6291(3) nm at room temperature. The primitive cell contains four formula units. The Raman spectra and crystallography show no distortion of the VO4 and Y/YbO8 groups. The crystal field is similar to that of the YVO4 crystal and is suitable for the dopant Yb3+ ions. A strong absorption at 975 nm arises from the 2F7/2 to 2F5/2 transition; with a bandwidth of 70 nm it may provide a useful pump band for InGaAs diode lasers. This band is about seven times broader than that of Nd-doped yttrium aluminum garnet and more than three times as broad as that of Nd-doped yttrium orthovanadate. The measured absorption of the YYV is compared to Judd–Ofelt (JO) theory. When applied, the JO theory of parity-forbidden electric-dipole transitions of rare earth ions on noncentrosymmetric sites demonstrates good agreement. The fluorescence spectrum reveals a ground state splitting of ΔE=463 cm−1. The fitted fluorescence lifetime is 1.18 ms at the wavelength of 1.0 μm. The calculated absorption cross section is 1.38×10−20 cm2. The order of magnitude of the emission cross section is estimated as 10−21 cm2. In Yb-doped yttrium aluminum garnet, the fluorescence lifetime is about 1.16–1.30 ms and the absorption cross section is 1.5×10−20 cm2. In Nd-doped yttrium orthovanadate, the fluorescence lifetime is 115 μs and the emission cross section is 10.7×10−19 cm2. A suitable concentration of the Yb3+ ions doped in the YbxY1−xVO4 crystals should modify the optical and the potential laser properties of the crystals. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371855
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