Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4481-4486 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Domain switching of 90° ferroelectric domains in tetragonal BaTiO3 and PbTiO3 is induced by the application of stress along specific crystallographic axes. For BaTiO3, single-domain crystals are obtained from twinned specimens by the application of ∼1.1 MPa of stress parallel to the a axis and twin boundaries are induced by application of ∼0.22 MPa of stress parallel to the c axis. Similar piezoelectrically-induced domain switching was observed in PbTiO3 at elevated temperature. We observed the rotation of the crystallographic axes associated with domain switching via micro-Raman spectroscopy. These results were consistent with optical microscope images of the domain switching which demonstrates the usefulness of micro-Raman spectroscopy for the study of ferroelectric domain structures. A phenomenological treatment of domain switching in a piezoelectrically-coupled system is described.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1671-1673 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of infinite layer compounds were prepared by molecular beam epitaxy. Defect layers were incorporated into the structure in order to dope the infinite layer phase. Hole type doping is usually observed. Resistivity measurements show that the conduction mechanisms change gradually with increasing doping level, from activational type to variable range hopping (or a mechanism governed by the Coulomb interaction between localized electrons) and then further to a mechanism related to weak localization which can be described by Δρ=T−S, where the exponent S ranges from 0.5 to 1.5. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 440 (2006), S. 684-687 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The nematode Caenorhabditis elegans is commonly used as a genetic model organism for dissecting integration of the sensory and motor systems. Despite extensive genetic and behavioural analyses that have led to the identification of many genes and neural circuits involved in regulating C. ...
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Heat and mass transfer 32 (1997), S. 199-206 
    ISSN: 1432-1181
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Description / Table of Contents: Zusammenfassung  Die Untersuchung bezieht sich auf den Wärme- und Stoffübergang bei Mischkonvektion über einer horizontalen Platte. Durch Anwendung der Translationsgruppen-Theorie auf die Grundgleichungen für Kontinuität, Impuls, Energie- und Diffusion wird gezeigt, daß eine Ähnlichkeitslösung dann existiert, wenn Temperatur und Konzentration an der Wand proportional zu x 4/(7-5n) sind und die Geschwindigkeit der bewegten Platte proportional zu x (3-n)/(7-5n) ist. Somit läßt sich das Problem in Abhängigkeit von Ähnlichkeitsparametern beschreiben. Die Ähnlichkeitsgleichungen wurden numerisch mittels eines Runge/Kutta-Schemas vierter Ordnung gelöst. Die numerischen Resultate für Pr=0.72 und verschiedene Werte der Parameter Sc, K 1, K 2 und K 3 zeigen deren Einfluß auf das Strömungsfeld sowie den Wärme- und Stoffübergang.
    Notes: Abstract  Investigation to the mixed convective heat and mass transfer over a horizontal plate has been carried out. By applying transformation group theory to analysis of the governing equations of continuity, momentum, energy and diffusion, we show the existence of similarity solution for the problem provided that the temperature and concentration at the wall are proportional to x 4/(7-5n) and that the moving speed of the plate is proportional to x (3-n)/(7-5n), and further obtain a similarity representation of the problem. The similarity equations have been solved numerically by a fourth-order Runge–Kutta scheme. The numerical results obtained for Pr=0.72 and various values of the parameters Sc, K 1, K 2 and K 3 reveals the influence of the parameters on the flow, heat and mass transfer behavior.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    ISSN: 1619-6937
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Summary The mixed convective heat and mass transfer over a horizontal plate has been investigated. A diffusion equation with a chemical reaction source term is taken into account. By applying transformation group theory to the analysis of the governing equations, we obtain a similarity solution of the problem in the case that the temperature and concentration at the wall and the moving speed of the plate are proportional to power distributions along the distance from the leading edge. Furthermore the similarity equations have been solved numerically by a fourth-order Runge-Kutta scheme. The numerical results obtained for various values of the Schmidt number, chemical reaction parameter and buoyancy parameters reveal the influence of the parameters on the flow, heat and mass transfer behavior.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Journal of superconductivity 7 (1994), S. 221-225 
    ISSN: 1572-9605
    Keywords: Crystal growth ; cuprate films ; supraconductor
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Layer-by-layer epitaxy has been used to grow cuprate films since the discovery of high-T c compounds. This deposition technique is in principle suitable for the growth of layered crystalline structures. However, the sequential deposition of atomic layer by atomic layer of cuprate compounds has presently not been optimized. Among the difficulties to overcome are the need to control separately the deposition of three to five elements, the oxidation requirements, and the observed tendency toward the nucleation of three-dimensional aggregates. Nevertheless, this deposition process is the only one which allows one to build artificial cell structures such as Bi2Sr2Ca(n−1)Cu n O y withn as large as 10. This process will also be the best one to grow films of the so-called infinite layer phase compounds belonging to the Sr1−x Ca x CuO2 family, in order to improve the transport properties and the morphological properties of the cuprate films. When performed at high substrate temperature (typically more than 600°C), the layer-by-layer epitaxy of cuprates exhibits usually 3D aggregate nucleation. Then the growth of the film no longer obeys the layer-by-layer sequence imposed during the deposition. We present here two experimental situations of true 2D sequential imposed layer epitaxy: the growth at 500°C under atomic oxygen pressure of Bi2Sr2CuO6 and of Sr1−x Ca x CuO2 phases.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...