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  • 1
    Electronic Resource
    Electronic Resource
    Cathodoluminescence study of diamond films grown by microwave plasma assisted chemical vapor deposition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1643-1647 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond films, produced by microwave plasma assisted chemical vapor deposition, were studied using cathodoluminescence (CL) scanning electron microscopy and spectroscopy techniques. Luminescence intensities of the observed prominent peaks at 420, 445, and 738 nm were found to vary widely as a function of both the deposition conditions and the location in the same sample. Additional peaks and shoulders at 464, 483, 500, 514, and 532 nm were also observed in some regions of diamond films deposited using the higher (i.e., 1%) CH4/H2 concentration and the substrate temperatures below 950 °C. Strong variations in CL intensities in different regions of the same sample were observed, indicating substantial variations in the distribution of defects and impurities in these diamond films. Luminescence due to the boron in a doped sample was also observed, and it was concluded that the higher CL intensity in that sample compared to other samples was due to the reduced defect densities and not due to the boron.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347261
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  • 2
    Electronic Resource
    Electronic Resource
    Stress variations and relief in patterned GaAs grown on mismatched substrates (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 555-557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence scanning electron microscopy studies reveal significant variations in stress across etched patterns of GaAs grown on both InP and Si substrates. The stress in the epilayer is relieved at convex corners and in patterned areas with dimensions on the order of 10 μm. The stress is uniaxial near the edge of a patterned region and changes to biaxial away from the edge, producing nonuniformities in the optical properties of patterned regions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99415
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Cathodoluminescence observation of metallization-induced stress variations in GaAs/AlGaAs multiple quantum well structures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1806-1808 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence scanning electron microscopy is utilized to investigate the stresses present underneath 0.4 μm gold layers deposited on GaAs/AlGaAs multiple quantum well structures grown by molecular beam epitaxy on GaAs substrates. Using the known stress dependence of excitonic lines in quantum wells, the magnitude of stress is determined to be about 1 kbar. The stress-induced change in the refractive index, attributed to photoelastic effect, is about 0.01 for the structures studied in the present work.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99631
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  • 4
    Electronic Resource
    Electronic Resource
    Novel high voltage transistor fabricated using the in situ junctions in a Si-TaSi2 eutectic composite (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1147-1149 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transistor action has been observed for the first time in a Si-TaSi2 eutectic composite. These devices, utilizing the in situ cylindrical Schottky junctions between the Si matrix and the TaSi2 rod phase, have characteristics typical of a metal-semiconductor field-effect transistor (MESFET). However, unlike a conventional planar device like a MESFET, eutectic transistors are resistant to avalanche breakdown. A device is demonstrated that blocks 600 V, a value that is three times larger than would be expected for a planar device of the same carrier concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99187
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  • 5
    Electronic Resource
    Electronic Resource
    Stress variations due to microcracks in GaAs grown on Si (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2236-2238 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Luminescence studies of thick (≥5 μm) GaAs epitaxial layers grown on Si substrates reveal regions of nonuniform stress associated with the presence of microcracks. Using cathodoluminescence spectroscopy as a tool for microcharacterization, the magnitude of the stress, derived from the peak positions of the luminescence spectra, is shown to increase gradually as a function of distance from the intersection of two microcracks. The greatest degree of stress relief was found at this intersection.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98951
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  • 6
    Electronic Resource
    Electronic Resource
    Novel high quantum efficiency Si-TaSi2 eutectic photodiodes (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 267-269 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high quantum efficiency photodiode has been fabricated using the in situ junctions in a Si-TaSi2 eutectic composite. Due to the three-dimensional distribution of junctions in this photodiode, it yields a nearly constant quantum efficiency of about 50% between 450 and 1000 nm. In addition, the average lateral distance between junctions of only 8 μm gives this novel photodiode an inherently good spatial resolution for photodiode array applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98469
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  • 7
    Electronic Resource
    Electronic Resource
    Depletion zone limited transport in Si-TaSi2 eutectic composites (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1964-1970 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depletion zones surrounding aligned, cylindrical, metal-semiconductor junctions formed during the directional solidification of a eutectic mixture are shown to influence the transport properties of the composite. Hall-effect and direct depletion zone width measurements made using the electron beam induced current technique of the scanning electron microscope have demonstrated that a relatively small total volume fraction (∼10%) of depleted material can lead to a significant increase in resistivity. The sensitivity of the resistivity of the composite to the depleted zone volume is attributed to a cellular distribution of the TaSi2 rods which causes substantial current streamlining. An analysis of the dopant segregation that occurs in the Si matrix of the composite boule during solidification supports the depletion zone limited transport model. The dependence of the resistivity on the depleted zone volume fraction of the composite indicates that the switching action in this novel material is achievable by increasing the volume fraction of depleted material between a source and drain contact.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341095
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical conductivity of electron-irradiated hydrogenated amorphous silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2590-2591 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results on electrical conductivity in keV-electron-irradiated hydrogenated amorphous silicon are presented. Increases in both the conductivity activation energy and the resistivity are observed in irradiated samples. Some possible uses of this effect are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337009
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  • 9
    Electronic Resource
    Electronic Resource
    Dislocation density reduction through annihilation in lattice-mismatched semiconductors grown by molecular-beam epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5609-5611 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial InAs/GaAs, GaAs/Ge/Si, GaAs/InP, and InAs/InP heterostructures are grown by molecular-beam epitaxy. Transmission electron microscopy studies reveal that, for these heteroepitaxial systems, the threading dislocation density is inversely proportional to the epilayer thickness. At a given thickness, the threading dislocation density is relatively insensitive to lattice mismatch (3.2%〈||Δa||/a〈7.2%), to differences in thermal expansion coefficients (6.9×10−7〈||Δα||〈3.4×10−6 K−1), to interfacial surface chemistry, and to epilayer morphology. Epitaxial layers incorporating growth interrupts produce lower overall defect densities, yet they maintain defect-reduction profiles similar to those observed in layers without the growth interrupt.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340343
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  • 10
    Electronic Resource
    Electronic Resource
    Cathodoluminescence scanning electron microscopy of semiconductors (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper reviews applications of cathodoluminescence scanning electron microscopy in the assessment of optical and electronic properties of semiconductors. The assessment includes, for example, information on band structure and impurity levels derived from spectroscopic cathodoluminescence, analysis of dopant concentrations at a level which is in some cases several orders of magnitude better than x-ray microanalysis, and mapping of carrier lifetimes and defects. Recent advances in both the various cathodoluminescence techniques and the processes leading to electron-beam-induced luminescence in semiconductors are reviewed. Possible future trends are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336491
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    Paper (German National Licenses)
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