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  • 1
    Electronic Resource
    Electronic Resource
    Fabrication of a Maxillofacial Prosthesis Using a Computer-Aided Design and Manufacturing System (2004)
    350 Main Street , Malden , MA 02148 , USA , and 9600 Garsington Road , Oxford OX4 2DQ , UK . : Blackwell Science Ltd
    Journal of prosthodontics 13 (2004), S. 0 
    Details
    ISSN: 1532-849X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Purpose: Maxillofacial prostheses are usually fabricated on the basis of impressions made with dental-impression material. The extent to which the prosthesis reproduces normal facial morphology depends on the clinical judgment of the individual fabricating the prosthesis. This paper describes a computer-aided design and manufacturing (CAD/CAM) system for the fabrication of maxillofacial prostheses. This system will provide a more consistently accurate reproduction of facial morphology. Materials and Methods: Facial measurements were taken using a non-contact three-dimensional laser morphological measurement system. The measurements were sent to a computer numerical controlled (CNC) milling machine to generate a cast of the patient's face for the fabrication of prosthesis. Results: Facial contours were measured using a laser. This method minimizes patient discomfort and avoids soft tissue distortion by impression material. Moreover, the digital data obtained is easy to store and transmit, and mirror-images can be readily generated by computer processing. Conclusion: This method offers an objective, quantified approach for fabricating maxillofacial prostheses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1532-849X.2004.04029.x
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of synchrotron radiation on electrical characteristics of SiOxNy thin films formed by rapid thermal processing in a N2O ambient (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3364-3366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The synchrotron radiation durability of SiOxNy films (about 10 nm) formed by rapid thermal processing in a N2O ambient was studied. No significant difference between the flat-band voltage of SiOxNy-metal-oxide semiconductors (MOS) capacitors patterned by synchrotron radiation lithography (SR-MOS) and that of capacitors patterned by conventional optical lithography (OP-MOS) was observed. The midgap interface state density of the SR-MOS was approximately one order of magnitude larger than that of the OP-MOS. The differences between the SR-MOS and the OP-MOS were nearly independent of the SR dose in the range of 540–2700 mJ/cm2, and were eliminated by annealing in a hydrogen ambient at 400 °C for 30 min.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110146
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  • 3
    Electronic Resource
    Electronic Resource
    Early B-lymphocyte precursors and their regulation by sex steroids (2000)
    Copenhagen : Munksgaard International Publishers
    Immunological reviews 175 (2000), S. 0 
    Details
    ISSN: 1600-065X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary: This review describes an improved characterization of early B-lymphocyte precursors in mice and the remarkable sensitivity of the same cells to hormones. The nuclear enzyme terminal deoxynucleotidyl transferase (TdT) was used as a marker to image and characterize bone marrow cells lacking all lineage-associated markers. Most early TdT+ precursors have a distinctive density of c-kit and express the interleukin-7Ra chain, as well as flt-3/flk2, but lack CD34. An understanding of those cell surface properties made it possible to obtain highly enriched, viable cells with the potential to give rise to CD19+ lymphocytes in culture. A series of other flow cytometry and culture experiments suggested a possible differentiation sequence for these early pro-B cells. This new model was used to advantage in our studies of sex steroids. It appears that early precursors represent a hormone-sensitive control point for determining numbers of new B lymphocytes that are produced within bone marrow. We also compare and contrast these findings with B lymphopoiesis in humans.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1600-065X.2000.imr017502.x
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  • 4
    Electronic Resource
    Electronic Resource
    Ecto-enzyme and signaling functions of lymphocyte CD 7 3 (1998)
    Oxford, UK : Blackwell Publishing Ltd
    Immunological reviews 161 (1998), S. 0 
    Details
    ISSN: 1600-065X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary: CD73 or ecto-5′-nucleotidase (S-NT) is a widely expressed ecto-enzyme which catalyzes the dephosphorylation of AMP and other nucleoside monophosphates. CD 73 participates in purine salvage through this enzymatic activity, supplying cells with precursors for energy metabolism and nucleic acid biosynthesis. As an enzyme that produces adenosine, CD 73 can also regulate adenosine receptor engagement in many tissues. However, CD73 also has functions independent of its enzyme activity like many glycosyl phosphatidylinositol (GPI)-anchored molecules, it transmits potent activation signals in T cells when ligated by antibodies. Less compelling evidence suggests that CD 73 may function as a cell adhesion molecule. In the human immune system, CD73 is expressed on subsets of T and B cells, on germinal center follicular dendritic cells, and on thymic medullary reticular fibroblasts and epithelial cells. Many challenging areas remain to be explored before the role of CD73 in the immune system will be fully understood. These include an evaluation of the role of adenosine receptors in lymphoid development, the identification of physiological CD73 ligands, a functional assessment of the GPI anchor, and an analysis of the intricate cell-type-specific and developmental regulation of CD 73 expression.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1600-065X.1998.tb01574.x
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  • 5
    Electronic Resource
    Electronic Resource
    Application of chrysotile-derived polymer to microlithography (1992)
    Springer
    Journal of inorganic and organometallic polymers and materials 2 (1992), S. 129-141 
    Details
    ISSN: 1572-8870
    Keywords: Chrysotile ; lithography ; E-beam ; resist ; Si-containing polymer
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract A novel silicon-containing polymer, SCMR (silylated clay minerals resist), has been developed for microlithography. SCMR was synthesized by reaction of the silicate sheet of chrysotile with dimethylvinylchlorosilane (DMVCS) and/or trimethylchlorosilane (TMCS). The structure of SCMR is estimated as a mixture of R1R2R3SiO, SiO3(OH), and SiO4 (R1, R2, R3: methyl or vinyl group). The silicon content of SCMR is 40–45 wt% and its O2-RIE resistance is 50 times as high as that of a novolak-based photoresist. SCMR has a high thermal stability and its profiles are not changed up to 300°C. SCMR is a negative working E-beam resist and has a high sensitivity, 2 µC/cm2, and a high resolution, 0.2-µm line and space. CMPR (clay minerals positive resist), consisting of SCMR and an acid generator, has been developed for a positive working E-beam resist. It has a high sensitivity, 0.2 µC/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00696540
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  • 6
    Electronic Resource
    Electronic Resource
    The study of plasma stability of poly(organophosphazene) films prepared on silicon wafers (1991)
    Springer
    Journal of materials science 26 (1991), S. 2797-2804 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Six poly(organophosphazenes) were prepared by the reaction between polydichlorophosphazene and alkoxides, phenoxides or amine compounds. The plasma stability of their films prepared on silicon wafers was investigated with an ellipsometer and ESCA; the plasma used was poly(bisanilinophosphazene) and the stability was similar to novolak resin.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00545572
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  • 7
    Electronic Resource
    Electronic Resource
    The study of plasma stability of poly(organophosphazene) films prepared on silicon wafers (1991)
    Springer
    Journal of materials science 26 (1991), S. 2797-2804 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Six poly(organophosphazenes) were prepared by the reaction between polydichlorophosphazene and alkoxides, phenoxides or amine compounds. The plasma stability of their films prepared on silicon wafers was investigated with an ellipsometer and ESCA; the plasma used was poly(bisanilinophosphazene) and the stability was similar to novolak resin.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02387754
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  • 8
    Electronic Resource
    Electronic Resource
    A new contrast enhanced lithography (cel) process using “chinese rosin” as a binder (1989)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 29 (1989), S. 902-906 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A new contrast enhanced lithography (CEL) process using Chinese rosin as a binder is described. This binder is soluble in both non-polar organic solvent and aqueous alkaline solution. Good coatability with organic solvent, no formation of mixing layer, and direct development without removing the CEL layer are the major advantages of this process. Among the three different kinds of photobleachable dyes, DZ-2 (diazonium salt) has the best optical property and the resist profile is improved on g-line reduction projection printing at the smallest dose. Moreover, this DZ-2 - Chinese rosin system is also effective at 365 nm, and the resist profile and the focus margin are improved on i-line reduction projection printing by using this system.
    Additional Material: 15 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760291404
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  • 9
    Electronic Resource
    Electronic Resource
    A high resolution negative working resist, LMR-UV, for g- and i-line lithography (1991)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 31 (1991), S. 855-859 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: LMR-UV (“low molecular weight resist for uv lithography”), a naphthoquinone-diazide sulfonic acid ester of a novolak resin, is a negative working resist. The mechanism of insolubilization of LMR-UV is based on the facts that the naphthoquinone-diazide moiety is decomposed to indenecarboxylic acid (polar compound) by photolysis upon UV irradiation and that the irradiated resist film insolubilizes in a non-polar developer. LMR-UV reliably forms 0.6 μm lines and spaces over a reflective substrate with steps by using a g-line stepper having a 0.35 NA lens. 0.6 μm-wide aluminum patterns over topography are obtained by use of g-line exposure and reactive ion etching. By use of an i-line aligner (NA = 0.42), LMR-UV resolves 0.25 μm space patterns with overhang profiles. The profiles are due to the large absorption coefficient of 3.8 μm-1. 0.3 μm wide aluminum patterns are formed by i-line exposure and lift-off metallization.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760311203
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  • 10
    Electronic Resource
    Electronic Resource
    A negative resist, LMR (low molecular weight resist), for deep UV lithography (1986)
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 26 (1986), S. 1105-1111 
    Details
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A negative deep UV resist, LMR, has been developed. LMR is a diazonaphthoquinonesulfonate of cresol novolac resin and possesses a high sensitivity of 15 mJ/cm2 and a high resolution up to 0.2 μm by contact printing. An important feature of LMR is the production of negative images with overhung profiles. Such profiles are attributed to LMR possessing a large absorbance in the deep UV region (12 μm-1 at 250 nm), which is of great advantage to the lift-off process in the fabrication of GaAs-FET, surface acoustic wave (SAW) devices, and so on. Furthermore, because of the good thermal stability of LMR, it can liftoff hard metals such as Ni and Mo. In order to elucidate the phenomenon that deep UV irradiation retards the dissolution rate of LMR, a mechanistic study has been carried out. In both LMR and its analog lacking diazoquinone moiety, their molecular weights Increase upon deep UV irradiation, which suggests that crosslinking occurs in the base resin. This is supported by 13C NMR analyses of photochemical reaction products and by detection of radical species produced from the base resin. The photochemical reaction of the base resin is important to understand the overall lithographic performance of LMR.
    Additional Material: 17 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pen.760261606
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