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  • 1
    Electronic Resource
    Electronic Resource
    Interfacial reactions of iron thin films on silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5246-5250 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions of iron thin films on silicon have been investigated by transmission electron microscopy. FeSi was found to form after 400 °C annealing. Small amount of Fe3Si was detected in samples annealed at 450 to 500 °C. β-FeSi2 grains were predominant with a few FeSi grains remained in samples annealed at 600 °C. β-FeSi2 was found to be the dominant phase, whereas α-FeSi2 was predominant in samples annealed at 900–1100 °C in N2 ambient and in vacuum, respectively. Two-step annealings were effective in promoting the growth and improving the quality of epitaxial FeSi2. More uniform growth of epitaxial FeSi2 was observed for samples annealed in vacuum than those heat treated in N2 ambient. The mechanisms of epitaxial growth and the influence of impurities on the interfacial reactions are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335264
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  • 2
    Electronic Resource
    Electronic Resource
    Microstructures of low-temperature-deposited polycrystalline silicon with micrometer grains (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6542-6548 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructures of low-temperature polycrystalline silicon grown both on SiO2 and Corning 7059 glass substrate are presented. The silicon was deposited by the hydrogen dilution method using electron-cyclotron-resonance chemical-vapor deposition at 250 °C without any thermal annealing. The hydrogen dilution ratios were varied from 90% to 99%. Transmission electron microscopy images, Raman shift spectra, and x-ray-diffraction (XRD) patterns of the films were obtained. The maximum grain size was about 1 μm and the crystalline fraction which was characterized from Raman shift spectra was near 100%. From the XRD patterns 〈111〉- and 〈110〉-oriented crystalline silicon grains were clearly present in the polycrystalline silicon films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359063
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial deposition. II. Epitaxial quality (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3398-3404 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Argon-ion bombardment has been optimized as a method to clean silicon substrates prior to epitaxial deposition at low temperatures (750 °C) and very low pressures (〈1×10−2 Torr). Structural characterization of subsequently deposited films has been performed to establish the relations between cleaning conditions and film properties. When cleaning conditions are insufficient, a residue of native oxide remains at the interface and disrupts the transfer of crystalline structure from the substrate to the epitaxial layer. When cleaning conditions are excessive, the substrate is damaged and the initial stages of film nucleation and growth are disrupted. Using an elevated substrate temperature of 750 °C, a window in ion energy and dose has been found in which native oxide is removed without net damage being produced in the substrate. Under these conditions, epitaxial films of excellent structural quality may be deposited, as evidence by transmission electron microscopy and defect etching.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339302
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  • 4
    Electronic Resource
    Electronic Resource
    Sulfurization of SiO2 surface for polycrystalline silicon growth on SiO2/Si structure at 250 °C (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1024-1026 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of sulfurizing SiO2 surfaces for the growth of Si/SiO2/Si structures was done in the present work. The silicon film was deposited at 250 °C by plasma enhanced chemical vapor deposition. All of the deposited Si films with or without sulfur treatment were of amorphous phases with a H2/(SiH4+H2) flow ratio less than 92%. For those films deposited at the H2/(SiH4+H2) flow ratio of 92%, a transition amorphous Si layer appeared between the SiO2 and polycrystalline silicon films in those samples without sulfur treatment. No transition amorphous Si layer was present in the sample deposited with sulfur treatment, and the largest grain size of polycrystalline silicon was estimated to be around 500 A(ring). The polycrystalline phase was obtained in all the silicon films deposited on SiO2/Si substrate with a H2/(SiH4+H2) flow ratio larger than 92%. This technique would be applicable towards thin film transistor fabrication.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110958
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  • 5
    Electronic Resource
    Electronic Resource
    Low-temperature (490 °C)GaAs epitaxial growth on (100)Si by molecular beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 985-987 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature (490 °C)GaAs epitaxial growth on (100) silicon by molecular beam epitaxy is reported in this letter. Silicon wafers were cleaned by spin-etch technique to passivate silicon surface with hydrogen, by which the conventional high-temperature ((approximately-greater-than)850 °C) oxide desorption step for pre-epitaxial substrate preparation is eliminated. The possibility of epitaxial growth on such a passivated surface to obtain good quality epitaxy is investigated. Epitaxial films are characterized by cross-sectional transmission electron microscopy (XTEM), plan-view transmission electron microscopy, and double crystal diffraction (DCD).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108508
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  • 6
    Electronic Resource
    Electronic Resource
    Low temperature GaAs epitaxial growth on Si(100) by molecular beam epitaxy and the post-growth rapid thermal annealing
    Amsterdam : Elsevier
    Journal of Crystal Growth 135 (1994), S. 469-475 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(94)90136-8
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