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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6349-6354 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The number densities n(t) of the atomic species produced by pulsed-laser (532-nm) interaction with YBaCuO targets were measured using time-resolved resonant absorption spectroscopy. At ∼5 J/cm2 fluence and 0.8 mm above the target, the peak n(t) ranged from 1013 to 1015 cm−3. The distributions of the normal z-velocity component could be modeled by Gaussian functions, in agreement with the theory of supersonic nozzle beams and the more recent theory of Knudsen layer formation. Such theoretical fits gave most probable z velocities in the km/s range and Mach numbers as high as 7. Ba-ion z velocities were better fitted by a 4:7 mix of fast (∼3-km/s) and slow (∼2-km/s) components.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 553-555 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The noise of YBa2Cu3O7−x and Tl2Ba2Cr2Cu3O10−x thin films in the frequency range from 0.5 Hz to 100 kHz was studied. In the normal state, it was found that 1/f noise dominated, with a magnitude strongly dependent on temperature. In the superconducting state, the noise was only observable at frequencies below 5 Hz with our present setup. Equilibrium thermal fluctuation noise was not observed in these films.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2429-2431 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interface between laser deposited Y-Ba-Cu-O thin films and yttria-stabilized cubic zirconia substrates was studied using high-resolution transmission electron microscopy and in situ resistivity measurements. It was found that a ∼5 nm layer of low resistivity compound was formed at the interface, at a substrate temperature of ∼650 °C. This result is qualitatively different from other substrates such as SrTiO3 and MgO, where the interface compounds are high resistivity oxides. This in situ Y-Ba-Cu-O thin film is superconducting with a Tc of 88 K and a Jc of 2×106 A/cm2 at 77 K.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1478-1480 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of the interfacial layers between YBCO films and various substrates were studied using in situ resistivity measurements. It was found that this method is sensitive to even a 10-A(ring)-thick interface layer. Moreover, it yields the resistivity of the interfacial layer and the YBCO film during deposition. For yttria-stabilized zirconia, the interface has a very low resistivity. For MgO and sapphire the interface has a high resistivity; SrTiO3 falls between these two cases. Sapphire shows a large reaction layer and evidence for nucleated growth, which are probably responsible for its relatively poor superconducting properties.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 954-956 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An oxygen jet placed near the target during plasma-assisted laser deposition produces a strong atomic oxygen beam with kinetic energies of 5.6 eV, simultaneous with the laser-induced atomic beams of Ba, Cu, and Y from the target. All atomic beams can be well characterized by a supersonic expansion mechanism. The behavior of the velocity distributions was studied as a function of the distance from the target and laser energy fluence. A target-substrate separation of 7 cm was found to be optimum in terms of producing the best as-deposited films. At that distance, the velocity distributions of all atomic beams become nearly the same.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1762-1764 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence spectroscopy of the plasma plume during plasma-assisted laser deposition of YBa2Cu3O7−x was performed. The spectrum in the range of 355–900 nm was measured at several spatial positions using an optical multichannel analyzer. It was found that both atomic and molecular components were present. Rich emission lines of O, O+, Y, Y+, Ba, Ba+, and Cu were observed, from which the plasma temperature could be estimated. Cu+ emission was conspicuously absent. The mechanism of the plasma process and its relevance to thin-film formation is discussed.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1095-1097 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdS films have been grown by laser-evaporation deposition in a clean vacuum environment. The films are highly oriented with a c axis perpendicular to the surface, and are optically smooth and homogeneous. These high quality films should be useful in nonlinear integrated optics applications.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1041-1043 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resistivity of a Y-Ba-Cu-O film was monitored during laser deposition in real time. Both deposition parameters leading to in situ films and those requiring high-temperature (850 °C) post-annealing were examined. It was found that in both cases, the resistivity was dependent on the oxygen partial pressure during deposition, and that filling the chamber with oxygen immediately after deposition was crucial to the formation of the superconducting phase. Oxygen outdiffusion during deposition at high temperature (600 °C) was found to be the major obstacle to true in situ film formation.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1044-1046 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting strips of 0.6 μm width were fabricated by direct laser writing on mirror-like Y-Ba-Cu-O thin films on various substrates. These films were grown by laser deposition without post-annealing. Laser ablation etching had no effect on the Tc and Jc until the lines were 〈1 μm wide. The 0.6-μm-wide strip showed some degradation of Tc. The critical current densities for all patterned lines were measured to be ∼4×106 A/cm2 at 20 ° K.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2473-2475 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Separate fast and slow components were observed in the electrical response to optical excitation of an Y-Ba-Cu-O thin film prepared by laser deposition. The temperature dependence of these two components indicated different thermal and nonthermal behavior. The speed of the nonthermal component is limited by the 6 ns laser pulse duration used in the excitation. It was also demonstrated that thin films that were optically semitransparent were crucial in the observation of the fast nonthermal response.
    Type of Medium: Electronic Resource
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