Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 1041-1043
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The resistivity of a Y-Ba-Cu-O film was monitored during laser deposition in real time. Both deposition parameters leading to in situ films and those requiring high-temperature (850 °C) post-annealing were examined. It was found that in both cases, the resistivity was dependent on the oxygen partial pressure during deposition, and that filling the chamber with oxygen immediately after deposition was crucial to the formation of the superconducting phase. Oxygen outdiffusion during deposition at high temperature (600 °C) was found to be the major obstacle to true in situ film formation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101725
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