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  • 1
    Electronic Resource
    Electronic Resource
    Low temperature catalytic formation of Si-based metal–oxide–semiconductor structure (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4124-4128 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si-based metal–oxide–semiconductor structure is formed at temperatures as low as 300 °C using the catalytic activity of the platinum (Pt) layer. X-ray photoelectron spectroscopy and transmission electron micrography measurements show that heat treatments of the ∼5 nm-Pt/∼1 nm-chemical oxide/Si(100)〉 devices at 300 °C increase the thickness of the oxide layer to 4–4.5 nm and the oxide layer is present between the Pt layer and the Si substrate, but not on the Pt surface. It is found that the thin chemical oxide layer effectively prevents the Pt diffusion and the silicide formation during the heat treatments. Heat treatments in dry- and wet-oxygen result in nearly the same oxide thickness. Oxygen atoms (or oxygen ions) produced at the Pt surface are suggested to be a diffusing species through the Pt and silicon oxide layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363284
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  • 2
    Electronic Resource
    Electronic Resource
    Reduction in leakage current density of Si-based metal–oxide–semiconductor structure by use of catalytic activity of a platinum overlayer (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4031-4033 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a method to reduce leakage current density through a SiO2 layer of Si-based metal–oxide–semiconductor structure. In this method, a ∼3-nm-thick platinum (Pt) layer is deposited on the SiO2 layer, followed by the heat treatment at 300 °C in oxygen. After the removal of the Pt layer, the density of leakage current for this structure is decreased to less than 1/1000 with no increase in the thickness of the SiO2 layer. The reduction in leakage current density is attributed to (i) a decrease in the density of defect states such as Si dangling bonds and suboxide species, and (ii) improvement of the uniformity of the oxide thickness, both of which are caused by dissociated oxygen ions injected from Pt to SiO2. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1331079
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    Paper (German National Licenses)
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