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Low-temperature Si epitaxy with high deposition rate using ion-assisted deposition (1998)

Bergmann, R. B. ; Zaczek, C. ; Jensen, N.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 72 (1998), S. 2996-2998

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Ion-assisted deposition is suitable for the formation of epitaxial Si films at high deposition rate and low substrate temperature. We demonstrate epitaxial deposition of Si films on (100)-oriented Si wafers using deposition rates up to 0.3 μm/min at deposition temperatures in the range of 500–650 °C. Hall-effect measurements show a majority carrier mobility of 200 cm2/V s at a hole concentration of 1.4×1017 cm−3 in our films. A minority carrier diffusion length of 4.5 μm is determined from quantum efficiency measurements in the epitaxially grown Si films. © 1998 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.121519

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