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  • 1
    Electronic Resource
    Electronic Resource
    Electron transport through GaAlAs barriers in GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 341-345 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have analyzed electronic transport through a single, 200-A(ring)-thick, Ga0.74Al0.36As barrier embedded in GaAs. At low temperatures and high electric field, the Fowler–Nordheim regime is observed, indicating that the barrier acts as insulating layers. At higher temperatures the thermionic regime provides an apparent barrier height, decreasing with the field, which is equal to the expected band offset when extrapolated to zero field. However, for some samples, the current is dominated by the presence of electron traps located in the barrier. A careful analysis of the temperature and field behavior of this current allows to deduce that the mechanism involved is field-enhanced emission from electron traps. The defects responsible are tentatively identified as DX centers, resulting from the contamination of the barrier by donor impurities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354114
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  • 2
    Electronic Resource
    Electronic Resource
    Defect characterization in GaAlInAs alloys (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3530-3534 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy (DLTS) and capacitance-voltage measurements at various temperatures have been used to characterize defects in Si-doped (Ga1−xAlx)1−yInyAs materials for x=0.3 and different values of y (0, 0.005, and 0.07). We only detect DX centers, those associated with the doping impurity (Si), but also others associated with Te and, eventually, Sn not introduced intentionally. When the experimental conditions are chosen to obtain exponential transients, the shape of the DLTS spectrum and its variation with the filling pulse duration can be accounted for by this contamination; i.e., no sign of the so-called alloying effect is detected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351431
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  • 3
    Electronic Resource
    Electronic Resource
    Li doping of GaAlAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4337-4340 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of unintentionally doped Ga1−xAlxAs epitaxial layers grown by molecular beam epitaxy, having various Al compositions (0.15, 0.18, and 0.29), have been Li diffused at 300 °C. Capacitance–voltage techniques show that the initial n-type doping concentrations (of the order of 1016 cm−3) increase after diffusion by typically a factor 5 to 10 demonstrating that isolated Li interstitials do exist and behave as donors. However, secondary-ion mass spectroscopy measurements show that the material contains 1019–1020 Li cm−3, which indicates that a large fraction of the Li impurities is not electrically active. Thus Li also produces defects as revealed by the fact that free electrons are frozen in the diffused layers below 77 K. Search for the existence of Li associated DX centers deep defects related to the donor impurities has been performed by deep level transient spectroscopy. Only the DX centers present before diffusion, i.e., associated with residual donor impurities, are detected in the layer of 0.29 Al fraction. This implies that either Li donors do not induce the existence of DX centers or electron emission from Li DX centers occurs below 77 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350816
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  • 4
    Electronic Resource
    Electronic Resource
    Defects in electron irradiated GaInP (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7229-7231 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a characterization of the defects created by electron irradiation at room temperature in n-type GaInP. Four electron traps, labeled E1–E4, and no hole traps have been detected using deep level transient spectroscopy in the temperature range 4–400 K. The corresponding energy levels and barriers associated with electron capture have been measured. The introduction rates, ranging from 4×10−3 to 0.4 cm−1, indicate that these defects are probably not primary defects but complexes resulting from the interaction of these primary defects between themselves or with impurities. This is not surprising, owing to the fact that defect annealing takes place below 300 K in InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354009
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  • 5
    Electronic Resource
    Electronic Resource
    Defects in epitaxial Si-doped GaInP (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 260-266 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have characterized by capacitance-voltage and deep level transient spectroscopy measurements the only defect detected in Si-doped GaInP layers. This defect exhibits an ionization energy of 0.435 eV but is located only at ∼20 meV below the bottom of the conduction band. All its characteristics, i.e., energy level, apparent capture barrier, ionization energy, can be understood if the defect is a donor associated DX center. Its cross section for electron and hole capture have been measured. The effect of an electric field on the ionization energy confirms that the defect is indeed shallow and a donor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354156
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  • 6
    Electronic Resource
    Electronic Resource
    Defects in electron-irradiated GaAlAs alloys (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 284-290 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using deep-level transient spectroscopy, we have characterized the energy levels, barriers for electron capture, and introduction rates of the defects introduced by electron irradiation in liquid-phase epitaxy grown n-type (Te)Ga1−xAlxAs layers of various alloy composition (x=0.25, 0.40, 0.60, and 0.80). We observed five defects which present various type behaviors: energy levels linked to the valence band or to the L conduction bands, constant barriers, or varying in a manner consistent with the band structure. These results are in agreement with the understanding obtained previously on electron-induced defects in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354104
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  • 7
    Electronic Resource
    Electronic Resource
    Recombination centers in electron-irradiated Czochralski silicon solar cells (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 815-819 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defect responsible for the minority-carrier lifetime in p-type Czochralski silicon introduced by electron irradiation has been detected and characterized by deep-level transient spectroscopy and spin-dependent recombination. From the isotropic g value (2.0055), the defect is tentatively identified as a Si dangling bond originating from a vacancy cluster. Its energetic location in the gap is at 630 meV below the conduction band. The electron and hole cross sections and their variation with temperature have been determined, and found to account for the minority-carrier lifetime of the material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357755
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  • 8
    Electronic Resource
    Electronic Resource
    Defects in molecular beam epitaxy grown GaAlAs layers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 68-69 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using deep level transient spectroscopy we characterized the shallow native traps in n-type doped Ga1−xAlxAs layers (with x=0.30 and 0.36) grown by molecular beam epitaxy. A trap lying at 0.18 eV below the conduction band is detected which exists in large concentration within 0.2 μm from the surface and is responsible for the freeze out of free carriers at low temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101756
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  • 9
    Electronic Resource
    Electronic Resource
    Defects in electron irradiated n-type GaP (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4948-4952 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristic ionization energies, barriers associated with capture, energy levels, and introduction rates of the various electron and hole traps introduced by electron irradiation in n-type GaP are determined using deep level transient spectroscopy. The same traps are created after 4 or 300 K irradiation. Their introduction rates correspond to those expected for primary displacements. From the similarity to the case of GaAs, we conclude that the corresponding defects are intrinsic defects (isolated vacancies and vacancy interstitial pairs) associated with the P (electron traps) and Ga (hole traps) sublattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354332
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  • 10
    Electronic Resource
    Electronic Resource
    Recombination centers in Czochralski-grown p-Si (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3944-3947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A sensitive deep-level transient spectrometer operating in the range 300–600 K has been used to detect the defect responsible for the minority-carrier lifetime in p-type Czochralski-grown Si. The characteristics of this defect (energy level, barrier for hole capture, hole and electron capture rates, and concentration) have been determined. This level is, as expected, located near the middle of the forbidden gap. We verified that it is indeed responsible for the lifetime by a comparison between the calculated value and the result of direct measurements. If this defect is an impurity, it could be manganese.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354461
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