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  • 1
    Electronic Resource
    Electronic Resource
    Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 556-557 (Sept. 2007), p. 109-112 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Homoepitaxial growth of 4H-SiC p+/π/n- multi-epilayer on n+ substrate and in-situ dopingof p+ and π-epilayer have been achieved in the LPCVD system with SiH4+C2H4+H2. The surfacemorphologies, homogeneities and doping concentrations of the n--single-epilayers and the p+/π/n-multi-epilayers were investigated by Nomarski, AFM, Raman and SIMS, respectively. AFM andRaman investigation showed that both single- and multi-epilayers have good surface morphologiesand homogeneities, and the SIMS analyses indicated the boron concentration in p+ layer was at least100 times higher than that in π layer. The UV photodetectors fabricated on 4H-SiC p+/π/n-multi-epilayers showed low dark current and high detectivity in the UV range
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.109.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Heavily Doped Polycrystalline 3C-SiC Growth on SiO〈sub〉2〈/sub〉/Si (100) Substrates for Resonator Applications (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 556-557 (Sept. 2007), p. 179-182 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: 3C-SiC is a promising material for the development of microelectromechanical systems(MEMS) applications in harsh environments. This paper presents the LPCVD growth of heavilynitrogen doped polycrystalline 3C-SiC films on Si wafers with 2.0 μm-thick silicon dioxide (SiO2)films for resonator applications. The growth has been performed via chemical vapor depositionusing SiH4 and C2H4 precursor gases with carrier gas of H2 in a newly developed vertical CVDchamber. NH3 was used as n-type dopant. 3C-SiC films were characterized by scanning electronmicroscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), secondaryion mass spectroscopy (SIMS), and room temperature Hall Effect measurements. It was shown thatthere is no voids at the interface between 3C-SiC and SiO2. Undoped 3C-SiC films show n-typeconduction with resisitivity, Hall mobility, and carrier concentration at room temperature of about0.56 [removed info]⋅cm, 54 cm2/Vs, and 2.0×1017 cm-3, respectively. The heavily nitrogen doped polycrystalline3C-SiC with the resisitivity of less than 10-3 [removed info]⋅cm was obtained by in-situ doping. PolycrystallineSiC resonators have been fabricated preliminarily on these heavily doped SiC films with thicknessof about 2 μm. Resonant frequency of 49.1 KHz was obtained under atmospheric pressure
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.179.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 556-557 (Sept. 2007), p. 387-390 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Three types of defects, namely defect I, defect II, defect III, in the 4H-SiC homoepilayerwere investigated by micro-raman scattering measurement. These defects all originate from a certaincore and are composed of (I) a wavy tail region, (II) two long tails, the so called comet and (III) threeplaits. It was found that there are 3C-SiC inclusions in the cores of defect II and defect III and theshape of inclusion determines the type of defect II or defect III. If the core contains a triangle-shapedinclusion, the defect III would be formed; otherwise, the defect II was formed. No inclusion wasobserved in the core of the defect I. The mechanisms of these defects are discussed
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.387.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    〈i〉In Situ〈/i〉 Boron and Aluminum Doping and Their Memory Effectsin 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 147-150 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The in-situ p-type doping of 4H-SiC grown on off-oriented (0001) 4H-SiC substrates was performed with trimethylaluminum (TMA) and/or diborane (B2H6) as the dopants. The incorporations of Al and B atoms and their memory effects and the electrical properties of p-type 4H-SiC epilayers were characterized by secondary ion mass spectroscopy (SIMS) and Hall effect measurements, respectively. Both Al- and B-doped 4H-SiC epilayers were p-type conduction. It was shown that the profiles of the incorporated boron and aluminum concentration were in agreement with the designed TMA and B2H6 flow rate diagrams. The maximum hole concentration for the Al doped 4H-SiC was 3.52×1020 cm-3 with Hall mobility of about 1 cm2/Vs and resistivity of 1.6~2.2×10-2 Wcm. The heavily boron-doped 4H-SiC samples were also obtained with B2H6 gas flow rate of 5 sccm, yielding values of 0.328 Wcm for resistivity, 5.3×1018 cm-3 for hole carrier concentration, and 7 cm2/Vs for hole mobility. The doping efficiency of Al in SiC is larger than that of B. The memory effects of Al and B were investigated in undoped 4H-SiC by using SIMS measurement after a few run of doped 4H-SiC growth. It was clearly shown that the memory effect of Al is stronger than that of B. It is suggested that p-type 4H-SiC growth should be carried out in a separate reactor, especially for Al doping, in order to avoid the join contamination on the subsequent n-type growth. 4H-SiC PiN diodes were fabricated by using heavily B doped epilayers. Preliminary results of PiN diodes with blocking voltage of 300 V and forward voltage drop of 3.0 V were obtained
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.147.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 251-254 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.251.pdf
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