ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
(PbySr1-y)ZnxTi1-xO3-x thin films were prepared on ITO/glass substrate by sol–gel processusing dip-coating method. The phase structure, morphology, and dielectric properties of thin filmswere investigated by XRD, SEM and impedance analyzer, respectively. The perovskite phasestructure was exhibited in the Zn-doped PST thin films. The formation ability of the thin films of theperovskite phase and its grain size decreased with the increase in doping Zn. The dielectric constant ofthe thin film was influenced by oxygen vacancies which could be controlled by Zn doping
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/53/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.336-338.283.pdf
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