Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 3278-3280
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Boron doping induced surface roughening was observed in conventional silicon molecular beam epitaxy. Reflection high energy electron diffraction and cross-sectional transmission electron microscopy revealed that as growth continued, the growth surface remained no longer planar but developed {113} facets. The facets evolved along with growth, and finally resulted in a severely roughened surface. The evolution of the roughening was found to remain the same in the boron doping concentration range of 1×1017–2×1020 cm−3 and the growth temperature range of 500–650 °C. This surface roughening effect is attributed to boron segregation behavior. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116573
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