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Deep levels associated with α and β dislocations in n-type InP (1990)

Zozime, Alain ; Schröter, Wolfgang

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 57 (1990), S. 1326-1327

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We describe an experimental method which allows us to investigate α and β dislocations in compound semiconductors separately by deep level transient spectroscopy. We use two linear configurations of hardness indentations surrounding a key-shaped metal-insulator-semiconductor contact on {100} planes of n-type InP to generate either α or β dislocations beneath the contact. We observe significant differences in the point defect concentration generated by the motion of the two types of dislocations.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.103472

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