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  • 1
    Electronic Resource
    Electronic Resource
    Nb/Ni and Ni/Nb bilayers on Si: Rapid thermal processing, phase separation, and ternary phase formation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7029-7033 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ni/Nb and Nb/Ni bilayers on Si(100), Ni/NbSi2/Si(100) and Nb/Ni/Si/SiO2/Si(100) were produced by rf sputtering and annealed by rapid thermal processing. Thereafter, phase sequence and morphology were deduced by Auger electron spectroscopy and x-ray diffraction. The first three cases lead to phase separation of the binary compounds NbSi2 and NiSi2. Conversely when SiO2 is used as a buffer to limit the consumption of Si, the ternary phase Nb4Ni4Si7 or Nb4Ni4Si7+NbSi2 can be produced depending on the amount of Ni available. These observations are consistent with the Nb-Ni-Si phase diagram, in which phase separation occurs in a Si-rich environment whereas the ternary phase is stable in a Si-poor environment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347642
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  • 2
    Electronic Resource
    Electronic Resource
    Niobium disilicide formation by rapid thermal processing: Resistivity-grain growth correlation and the role of native oxide (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4652-4655 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of NbSi2 from Nb/Si(100) is studied using rf sputtering and rapid thermal processing. For a long sputter-etching time (10 min) of the Si substrate, NbSi2 is first formed at 720 °C. The lowest resistivity attained is 38 μΩ cm, one of the best for refractory metal silicides. The variation of the sheet resistance versus annealing temperature is correlated to grain growth. The grain size is deduced from the x-ray coherence length of the NbSi2(111) peak which sharpens and increases in intensity for T(approximately-greater-than)720 °C. For shorter sputter etching time (5 min), NbSi2 only forms above 895 °C. This is attributed to the native oxide at the Si interface. An estimated ternary phase diagram of Nb-Si-O shows that Nb and SiO2 coexist at this temperature. Unlike other refractory metal silicides, oxygen in the Nb film is expelled as the silicide is formed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346175
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  • 3
    Electronic Resource
    Electronic Resource
    Fast radiative processing of platinum silicide (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 607-609 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-intensity quartz-halogen tungsten lamps were used to form platinum silicide films. Platinum films of 42 and 52 nm were evaporated on single-crystal silicon and subsequently processed in a roughing vacuum from 5 up to 20 sec. The electrical characteristics and the microstructure of the silicide films were studied by four-point probe measurements, x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy. The silicide formation started within the first few seconds, and the reaction was essentially completed after 10 sec. The dominant phase was PtSi, while only a small amount of Pt2Si was detected in the 5- and 10-sec processed samples. The presence of oxygen and carbon in the film and processing ambient did not prevent the rapid silicide formation, although it gave rise to a surface layer composed of silicon oxide and other contaminants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334745
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  • 4
    Electronic Resource
    Electronic Resource
    Copper silicide formation by rapid thermal processing and induced room-temperature Si oxide growth (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 357-359 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of copper silicide has been studied by rapid thermal processing (RTP) of 500 A(ring) of Cu on Si substrates. Interaction between the diffusing metal and Si starts at 250–300 °C. Annealing at higher temperatures yields complete silicidation to Cu3Si. This leads to strong modifications of the Auger line shapes of both Si and Cu. A plasmon peak located 20 eV below the main peak is the fingerprint in the Cu spectrum. Strong features at 80, 85.6, 89.2, and 93.2 eV as well as a 1 eV shift of the 90.4 eV peak appear in the Si L2,3VV spectrum. Whether for Cu films annealed in nitrogen or in vacuum, exposure of the silicide to air results in the growth of silicon oxide at room temperature and continues until the silicide layer is totally converted. This repeatable and controllable oxidation of silicon is accompanied by changes in resistivity and color reflecting the extent of the process. For Cu/CoSi2/Si structures, the cobalt silicide acts as a transport medium for the growth of the copper silicide and also serves as a cap preventing the oxidation of the final CoSi2/Cu3Si/Si contacts
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104105
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  • 5
    Electronic Resource
    Electronic Resource
    The influence of an interposed titanium thin film on the formation of tungsten silicides (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1429-1434 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of tungsten silicides have been formed on samples of W(50 nm)/Ti(5 or 10 nm)/Si〈100〉 by rapid-thermal annealing. The results of the experiments show that by interposing a thin layer of Ti at the W-Si〈100〉 interface, the temperature at which WSi2 is first detected is lowered to 570–600 °C, and the W-Si reaction rate is increased, as compared to the W/Si〈100〉 samples. The resulting WSi2 film has an electrical resistivity of about 115 μΩ cm with a smooth surface. Neither the W-rich silicide phase, W5Si3, nor the hexagonal WSi2 phase is found in the annealed samples. The growth kinetics are monitored using a four-point probe, x-ray diffraction, scanning electron microscopy, and scanning Auger analysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338123
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  • 6
    Electronic Resource
    Electronic Resource
    Characterizations of palladium silicides formed by rapid thermal annealing (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4200-4206 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High intensity quartz-halogen tungsten lamps with power densities of 10, 15, and 25 W/cm2 were used to form palladium silicide films. Metal films of 83–200 nm were evaporated on (100)-oriented single-crystal silicon and subsequently processed in vacuum for time intervals from 5 to 60 s. The electrical characteristics and the microstructure of the silicide films were studied by four-point probe, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and Rutherford backscattering spectroscopy. A nonuniform PdSi film with dendritelike surface topography is formed at 25 W/cm2. A somewhat discontinuous low resistance film of predominantly PdSi is formed at 15 W/cm2. The same power density, for contaminated samples, induces agglomeration upon processing. A uniform Pd2Si film with a resistivity of 27 μΩ cm is obtained at 10 W/cm2. Longer processing times result in nucleation and growth of PdSi from Pd2Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335553
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  • 7
    Electronic Resource
    Electronic Resource
    Modification of the microstructure in epitaxial erbium silicide (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1748-1750 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several growth techniques in the formation of thin (〈100 A(ring)) epitaxial rare-earth silicide films have been investigated. Low temperature processing of a thin (3–4 A(ring)) template layer results in distinct changes of the low energy electron diffraction patterns, with a 1×1 pattern occurring below 400 °C and a (square root of)3 ×(square root of)3 pattern occurring for higher temperature anneals. We present corresponding real and reciprocal space data showing that an appropriate template will produce structurally continuous films with no evidence of a vacancy superstructure that can occur in films prepared under less well-controlled conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109594
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  • 8
    Electronic Resource
    Electronic Resource
    Sensors and actuators: state of the art of sensor research and development - Elsevier Sequoia, Lausanne, 1987 (ISBN 0-444-75065-7). vii+425 pp. Price SFr 270
    Amsterdam : Elsevier
    Analytica Chimica Acta 202 (1987), S. 262-263 
    Details
    ISSN: 0003-2670
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/S0003-2670(00)85932-2
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  • 9
    Electronic Resource
    Electronic Resource
    A retinal CCD Sensor for fast 2D shape recognition and tracking
    Amsterdam : Elsevier
    Sensors and Actuators A: Physical 22 (1989), S. 456-460 
    Details
    ISSN: 0924-4247
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0924-4247(89)80014-7
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  • 10
    Electronic Resource
    Electronic Resource
    A compact line and edge orientation detection sensor
    Amsterdam : Elsevier
    Sensors and Actuators A: Physical 40 (1994), S. 217-225 
    Details
    ISSN: 0924-4247
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0924-4247(94)87008-X
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