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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6714-6721 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for calculating the electron inelastic mean free path and stopping power in insulators in the 50 eV–10 keV energy range is presented. Both valence and core electron contributions have been considered. The valence part has been estimated following the dielectric theory modified to include the energy gap; the core contribution has been evaluated on the basis of the classical binary encounter theory. Inelastic mean free path and stopping power calculations based on this model have been performed for several alkali halides: LiF, NaCl, KCl and CsI. They are compared to existing experimental data and Penn model's predictions for the mean free path and to Bethe's values for the stopping power; a fair agreement is found for incident electron energies higher than 100-200 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5429-5436 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for electron transport and emission in CsI is proposed. It is based on theoretically calculated microscopic cross sections for electron interaction with the nuclear and the electronic components of the solid. A Monte Carlo program based on this model was developed to simulate secondary electron emission induced by x rays and electrons in the energy range of 1 to 10 keV. The calculated secondary emission yields agree with existing experimental data. The model provides all necessary characteristics for the design of radiation detectors based on secondary electron emission. It can be expanded to higher incident energies and other alkali halides.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4656-4662 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model of electron transport in alkali halides, below 10 eV, is described. It is based on theoretically calculated microscopic cross sections of electron interactions with lattice phonons. Both acoustic and optical scatterings are taken into account, the former being also treated as a quasielastic process that randomizes the electron motion. Monte Carlo calculations based on the model simulate the UV-induced photoelectron emission from CsI. The calculated quantum efficiency and energy spectra are in good agreement with experimental data, in the photon energy range of 6.3–8.6 eV. The probability for an electron to escape from CsI, NaCl, and KCl is provided as a function of its energy and creation depth. A comparison is made between our approach and other phenomenological models.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7506-7509 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A microscopic model for low energy electron interaction in alkali halides was used to simulate secondary electron emission from CsI induced by x rays with energies up to 100 keV. The integral "current'' and "pulse'' yields were calculated as function of the x-ray energy, CsI convertor thickness, and angle of incidence. We observe a decrease in true low energy (〈50 eV) secondary electron yields at increasing x-ray energies and discuss the effectiveness of CsI convertors coupled to gaseous electron multipliers developed for fast, high resolution x-ray imaging.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1676-1680 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Our microscopic model for electron transport in alkali halides was used for the calculation of the spatial characteristics of secondary electron cascades induced by x rays and electrons in an infinite CsI volume, in the energy range of 5–50 keV. The results show that the shape of the cascade cloud preserves the features of the primary interactions only at the core, where the cascade has an elongated, forward peaked shape for incident electrons and is spherically symmetric for photons. At the periphery the cloud is practically spherical, and of very low electron density. The maximal cascade dimensions do not exceed 10 μm at the highest considered energy. The impact of these characteristics on secondary electron emission from finite thickness CsI layers is discussed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5809-5816 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Calculations of inelastic mean free paths, stopping powers, and continuous slowing down ranges for ten solid organic materials: polyethylene, guanine, poly(2-vinylpyridine), diphenyl-hexatriene, carotene, polystyrene, polymethyl(methacrylate), paraffin, polybudene sulfone, polyacetylene and water have been performed for electrons in the 20 eV–10 keV energy range. The complex dielectric formalism was used for estimating the valence part of the transport characteristics, whereas part of the electron–core interactions was evaluated using the binary encounter approximation. The calculations have been extended to account the exchange effect. Detailed comparison of the calculated data with available experimental and theoretical results is presented. The calculated mean ionization potentials for all considered materials were found in good agreement with the ICRU-37 data. Trends of the energy dependence of the inelastic mean free paths, stopping powers, and ranges are discussed. It was shown that Bethe's nonrelativistic stopping power theory within an accuracy of 10% can be applied to these materials far below 10 keV. The presented data constitute a data base for Monte Carlo simulation of electron transport in organic materials, having a wide field of applications in microdosimetry, electron lithography, and others. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5841-5849 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A microscopic theoretical model is proposed for calculating the characteristics of ultraviolet photoemission and x-ray secondary electron emission induced from CsI photoconverters. This approach is based on a realistic picture of the basic interactions of photons and induced electrons within the material. Both differential and integral emission characteristics, such as energy spectra and quantum efficiencies, are estimated according to the model and are found to agree, in general, with experimental data. The model-calculated photoemission enhancement under high external electric fields is also considered and is fairly compatible with measured values. The applicability of the model in the field of radiation detectors incorporating solid photoconverters is discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2890-2896 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The escape length of electrons photoinduced from thin CsI, KI, RbI, NaI, and CsBr evaporated films was measured in the 140–180 nm photon spectral range. Theoretical model predictions of the escape length value are in fair agreement with the experimental results. They vary between 10 and 40 nm, the highest values being for CsI, RbI and CsBr. For CsI, measured and calculated ultraviolet-induced escape length values are consistent with that determined from x-ray photoemission quantum yield data. Post-evaporation annealing of the films had no major impact on the measured electron transport properties. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2952-2954 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A combination of irradiation experiments (using energetic protons and heavy ions) and a theoretical analysis was used, for the first time, to study proton induced single event latchup (SEL) in electronic devices. A significant difference between SEL and single event upset (SEU) was found. For SEU the device sensitivity can be predicted by a model assuming the collection of the majority of the charge carriers generated in the sensitive volume by the nuclear fragments of the (p,Si) reactions. For SEL, the measured sensitivities are much lower than predicted by prompt charge collection. Recombination of charge carriers (generated by the heavier fragments) due to a track electric field reasonably explains the SEL data.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Nuclear Instruments and Methods in Physics Research Section A: 348 (1994), S. 207-215 
    ISSN: 0168-9002
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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