ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
We have designed a set of experiments in which a controlled supersaturation of vacanciescan be maintained constant during annealing of a boron implant. In presence of voids, a remarkablereduction of boron diffusivity is observed and, for low fluence B implantation, TED can be totallysuppressed. We show that the presence of nanovoids in the B implanted region is not a prerequisitecondition for the reduction of B diffusivity. Large voids located at more than 100 nm apart from theB profile still show the same effect. Small voids can also be used to increase the activation of boron.All these results are consistent with the hypothesis that, during annealing, vacancies are injectedfrom the voids region towards the Is rich region in the implanted region where they massivelyrecombine. Finally, we show that BICs cannot be simply dissolved by injecting vacancies into theregion where they stand
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.357.pdf
Permalink