Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    YBa2Cu3O7−δ films deposited by a novel ion beam sputtering technique (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 301-303 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting films of YBa2Cu3O7−δ have been synthesized in a novel ion beam sputter deposition system which features a rotating target holder with BaO2, CuO, and Y2O3 as the sputtering targets. The dwell time of the ion beam on each oxide target is determined by a computer-controlled feedback loop using the signal from a programmable quartz crystal resonator. The sputtered fluxes of all film components originate from the same spatial location, ensuring homogeneous film composition. The results presented demonstrate for the first time an automated ion beam sputter deposition system with the capability of producing high Tc superconducting films by controlled sputtering of either elemental metallic components or oxide precursors. The concept may be extended to include processes such as patterning, production of layered structures (junctions), and film encapsulation necessary for microcircuit manufacturing based on high Tc superconducting films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101568
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Modulated ion beam studies of product formation and ejection in ion-induced etching of GaAs by Cl2 (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1152-1157 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured products' identity and kinetic energy for ion-induced etching of GaAs by chlorine at room temperature. Modulated ion beams of 1-keV Ne+ are used to etch the surface in the presence of steady-state flux of Cl2 with a neutral/ion flux ratio of 0–100. The major product species observed are GaCl3 and AsCl3, and substantial amounts of elemental Ga and As. Subchlorides of Ga are observed for neutral/ion ratio 〈10. Kinetic energies were measured by analysis of time-of-flight waveforms. Sputtered Ga and As atoms, in the absence of surface chlorination have most probable kinetic energy of approximately 5 eV, in accord with the expected sputtering mechanism. GaCl3 and AsCl3 product species have most probable kinetic energies of 0.3–0.5 eV, and Ga and As atoms emitted from a chlorinated surface have most probable energy of 1–2 eV. No evidence for slow kinetic processes with substantial surface residence times was observed. These observations are discussed in light of other reports of product formation and ejection in plasma and ion-beam-assisted etching. The results suggest a mechanism involving synthesis and ejection of products during the collision cascade following ion impact.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340022
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Surface segregation during reactive etching of GaAs and InP (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 967-969 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the surface composition of gallium arsenide and indium phosphide under conditions of physical sputtering and reactive ion beam etching. Samples of Fe-doped (100) GaAs and InP were bombarded with 1-keV Ne+ ions under a varying amount of Cl2 dose. Low-energy ion scattering spectroscopy and sputtered neutral mass spectrometry indicate an increase of the Group V element at the surface upon addition of Cl2 to the system. This effect is believed to be due to segregation of the As and P due to an altered chemical potential at the surface/vacuum interface resulting from chlorine adsorption. The segregation and subsequent volatilization of PClx species leaves aggregates of In/InClx species at the surface, resulting in a roughened surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336574
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Electro-optic characterization of ion beam sputter-deposited KNbO3 thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1964-1966 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Electro-optic properties of potassium niobate thin films deposited using a computer-controlled ion beam sputtering technique have been studied for the first time. Epitaxial and polycrystalline films were deposited on single crystal magnesium oxide and highly (111) oriented films were deposited on sapphire for the study. All films exhibited a quadratic-like dependence of birefringence shift on the applied electric field. The microstructure of the films and its relation to the observed electro-optic properties is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105033
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...