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  • 1
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface Technology 6 (1978), S. 287-300 
    ISSN: 0376-4583
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5090-5096 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the dependence of the absorption edge and the refractive index of wurtzite AlxGa1−xN films on temperature and composition using transmission and photothermal deflection spectroscopy. The Al molar fraction of the AlxGa1−xN films grown by plasma induced molecular beam epitaxy was varied through the entire range of composition (0≤x≤1). We determined the absorption edges of AlxGa1−xN films and a bowing parameter of 1.3±0.2 eV. The refractive index in the photon energy range between 1 and 5.5 eV and temperatures between 7 and 295 K was deduced from the interference fringes. The static refractive index n(0) changed from 2.29 for GaN to 1.96 for AlN at room temperature. A variation of temperature from 295 to 7 K resulted in a decrease of refractive index (at photon energies close to the band gap) by 0.05±0.01 and in an energy shift of the absorption edge of about 64±5 meV independent of the Al content of the films. Using the Kramers–Kronig dispersion relation and an approximation for the dispersion coefficient for photon energies near the band gap, the refractive index could be described as a function of photon energy, Al content, and temperature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3249-3253 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the nitrogen nuclear spin on the optically detected magnetic resonance and electron spin resonance signatures of the intrinsic shallow donor and a deep defect causing the characteristic yellow luminescence have been studied on wurtzite GaN epitaxial layers grown by plasma induced molecular beam epitaxy with isotopically pure 14N and 15N. In particular, the linewidth of the deep defect signal is observed to be independent of the nitrogen isotope. The missing effect of the different nuclear spin properties of the 14N and 15N isotopes is discussed in view of current microscopic models for the yellow luminescence in GaN. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1504-1506 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlxGa1−xN alloys were grown on c-plane sapphire by plasma-induced molecular beam epitaxy. The Al content x was varied over the whole composition range (0≤x≤1). The molar Al fraction was deduced from x-ray diffraction and for comparison by elastic recoil detection analysis. The composition of the alloys calculated from the lattice parameter c underestimates x. This is due to a deformation of the unit cell. The exact Al mole fraction and the biaxial strain of the alloys can be calculated by an additional determination of a, using asymmetric reflections. The results obtained by x-ray diffraction and elastic recoil detection provide evidence for the validity of Vegard's law in the AlGaN system. In addition, the deviation of the band gap from a linear dependence on x was investigated. We found a downward bowing with a bowing parameter b=1.3 eV.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 970-972 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of biaxial stress on the optical properties of thin GaN films is studied by x-ray diffraction and Raman and photoluminescence spectroscopy. The stress is caused by differences in the thermal expansion coefficient and lattice mismatch between the film and c-plane sapphire substrates. In particular, the influence of various thicknesses of AlN buffer layers on the strain in GaN films is studied. GaN/AlN films were deposited by low pressure metal organic chemical vapor deposition using triethylgallium and tritertbutylaluminum and ammonia. We observe a pronounced reduction of strain in the GaN films with increasing buffer thickness: An AlN buffer layer thicker than 200 nm eliminates the stress completely. Estimates of the linear coefficient for the near band gap luminescence shift due to biaxial compressive strain yield a value of 24 meV/GPa. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1749-1751 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Patterned etching of GaN films was achieved with laser-induced thermal decomposition. High-energy laser pulses are used to locally heat the film above 900 °C, causing rapid nitrogen effusion. Excess gallium is then removed by conventional etching. At exposures of 0.4 J/cm2 with 355 nm light, etch rates of 50–70 nm per pulse were obtained. Illumination with an interference grating was used to produce trenches as narrow as 100 nm. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Nuclear Instruments and Methods in Physics Research Section A: 273 (1988), S. 444-446 
    ISSN: 0168-9002
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Journal of applied electrochemistry 9 (1979), S. 219-232 
    ISSN: 1572-8838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Notes: Abstract The electrodeposition of hard gold in layers of 2 μm was investigated. The electrolyte was an acid citrate bath (pH 3·5) with cobalt as an additive. A flow cell allowed a controlled variation of the hydrodynamic conditions. The following features were examined quantitatively in the experiments: the current efficiency for gold deposition (10–30%), the carbon and cobalt content, as well as the porosity of the deposits, and the morphology [by scanning electron microscope (SEM)]. Above 50 mA cm−2 the deposition of gold and to a minor extent the incorporation of cobalt become mass transport limited (with certain complications resulting from the complex nature of the diffusion layer). The influence observed below 50 mA cm−2 seems to be due to the synergic effect of the transport controlled reduction of dissolved oxygen. A simple qualitative model for the incorporation of carbon is proposed. The substantial decrease in current efficiency observed upon the addition of cobalt to the bath is probably causedboth by a decrease of the hydrogen overpotential and by an increase of the overpotential for gold deposition. From the viewpoint of technical application, the most relevant result, is the substantial decrease in porosity at decreasing current density (c.d.) and increasing flow rate.
    Type of Medium: Electronic Resource
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