ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
The electrical properties of structures included 1-octadecene (CnH2n, n=18) monolayersdeposed onto the oxide-free silicon surface or Si/SiGe/Si layers were analyzed as a function ofsurface pretreatment (hydrogen- or iodine-terminated silicon surface) and layer deposition regime(thermal- or photo-activated process). Two types of traps (for electrons and holes) were found at theinterface between the monolayers and substrate. The density of traps was shown to depend on the,H- or I-termination of the silicon surface, the illumination intensity and deposition time duringphoto-activated deposition, and the temperature of thermal-activated deposition. The optimalregimes can be chosen for minimization of the surface charge in the structures covered with 1-octadecene monolayers, which provides a high conductivity of thin near-surface layers
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.83.pdf
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