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  • 1
    Electronic Resource
    Electronic Resource
    Relaxation times in InAs/AlSb quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2439-2441 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured energy relaxation and longitudinal-optical (LO) phonon emission times in modulation-doped InAs quantum wells driven by high dc fields, and by intense ac fields at frequencies from 0.49 to 0.66 terahertz. We find that for electron temperatures between 50 and 200 K, LO phonon emission dominates energy relaxation. We determine a large net LO phonon emission time, indicating a strong LO phonon bottleneck both in high dc and in intense terahertz fields. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121377
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Interband impact ionization by terahertz illumination of InAs heterostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3975-3977 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental studies of InAs heterostructures illuminated by far-infrared (FIR) radiation reveal an abrupt increase in the charge density for FIR intensities above a threshold value that rises with increasing frequency. We attribute this charge density rise to interband impact ionization in a regime in which ωτm∼1, where τm is the momentum relaxation time, and f=ω/2π is the FIR frequency. The dependence of the density rise on the FIR field strength supports this interpretation, and gives threshold fields of 3.7–8.9 kV/cm for the frequency range 0.3–0.66 THz. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117842
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature of quasi-two-dimensional electron gases under steady-state terahertz drive (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 829-831 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use photoluminescence to study the time-average energy distribution of electrons in the presence of strong steady-state drive at terahertz (THz) frequencies, in a modulation-doped 125 A(ring) AlGaAs/GaAs square well that is held at low lattice temperature TL. We find that the energy distribution can be characterized by an effective electron temperature, Te((approximately-greater-than)TL), that agrees well with values estimated from the THz-illuminated, dc conductivity. This agreement indicates that under strong THz drive, LO phonon scattering dominates both energy and momentum relaxation; that the carrier distribution maintains a heated, thermal form; and that phonon drift effects are negligible. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116547
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    Paper (German National Licenses)
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