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  • 1
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physics Letters A 68 (1978), S. 336-338 
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physics Letters A 67 (1978), S. 211-213 
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrananocrystalline diamond (UNCD) films, grown using microwave plasma-enhanced chemical vapor deposition with gas mixtures of Ar–1%CH4 or Ar–1%CH4–5%H2, have been examined with transmission electron microscopy (TEM). The films consist of equiaxed nanograins (2–10 nm in diameter) and elongated twinned dendritic grains. The area occupied by dendritic grains increases with the addition of H2. High resolution electron microscopy shows no evidence of an amorphous phase at grain boundaries, which are typically one or two atomic layer thick (0.2–0.4 nm). Cross-section TEM reveals a noncolumnar structure of the films. The initial nucleation of diamond occurs directly on the Si substrate when H2 is present in the plasma. For the case of UNCD growth from a plasma without addition of H2, the initial nucleation occurs on an amorphous carbon layer about 10–15 nm thick directly grown on the Si substrate. This result indicates that hydrogen plays a critical role in determining the nucleation interface between the UNCD films and the Si substrate. The relation between diamond nuclei and Si is primarily random and occasionally epitaxial. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 301-303 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting films of YBa2Cu3O7−δ have been synthesized in a novel ion beam sputter deposition system which features a rotating target holder with BaO2, CuO, and Y2O3 as the sputtering targets. The dwell time of the ion beam on each oxide target is determined by a computer-controlled feedback loop using the signal from a programmable quartz crystal resonator. The sputtered fluxes of all film components originate from the same spatial location, ensuring homogeneous film composition. The results presented demonstrate for the first time an automated ion beam sputter deposition system with the capability of producing high Tc superconducting films by controlled sputtering of either elemental metallic components or oxide precursors. The concept may be extended to include processes such as patterning, production of layered structures (junctions), and film encapsulation necessary for microcircuit manufacturing based on high Tc superconducting films.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 435-438 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Green light produced by second harmonic generation has been observed in an epitaxial orthorhombic KNbO3 thin film planar waveguide produced by ion-beam sputter deposition on a (100)-oriented MgO single crystal substrate. A Nd:YLF laser beam, with a wavelength of 1.053 μm and ∼80 ps, 100 MHz pulses under mode-locked operation, was coupled into the waveguide using a rutile prism, and a green light streak 3–4 mm long was seen in the guide. The TM0 mode of the input beam was phase matched to the TE1 mode of the second harmonic for a film thickness of 2300 A(ring). Second harmonic generation was also observed in a nonwaveguided configuration on thicker (4600–6500 A(ring)) films on both MgO and KTaO3 substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric lead zirconium titanate [Pb (ZrxTi1−x)O3] (PZT) thin films have been synthesized by using an automated laser ablation deposition technique with a capability for layer-by-layer or simultaneous deposition of elemental film constituents. The technique is suitable for producing multicomponent and/or multilayered thin films with controlled stoichiometry, such as high-temperature superconductor, ferroelectric, and electro-optic thin films. PZT films were synthesized on MgO (100) by either sequential deposition of layers of ZrO2, TiO2, and PbO, produced by laser ablation of ZrO2, TiO2, and PbO targets, or by simultaneous deposition of all species from ablation of stoichiometric or PbO-rich PZT targets. Films were deposited at 200 °C and subsequently annealed at 600 °C for different periods of time. The orientation, microstructure, surface topography, and composition of the films were characterized by x-ray diffraction, transmission electron microscopy, scanning electron microscopy, and Rutherford backscattering spectrometry, respectively. As-deposited layer films consists of highly oriented (001) PbO layers, from which highly oriented (110) PZT films are produced after postdeposition annealing. On the other hand, laser ablation of bulk PZT targets yields amorphous as-deposited films, which evolve into highly oriented (100) PZT films after postdeposition annealing. Preliminary electrical characterization of the PZT films included polarization hysteresis, fatigue, conductivity (ac and dc), and capacitance versus voltage measurements. From the initial electrical measurements, it appears that the remnant polarization of the layered PZT films is similar to that of the films produced by laser ablation of bulk PZT targets.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical spectroscopic analyses have been performed to study luminescence from plasmas produced by ablation of YBa2Cu3O7 single-phase high Tc bulk superconductors exposed to XeCl excimer laser (308 nm) pulses. Only excited atomic neutral and single ionized species (Cu/Cu+, Ba/Ba+, Y/Y+) were observed within the experimental resolution of an optical multichannel analyzer detection system, when irradiating the targets in vacuum (∼10−5–10−4 Torr). Conspicuously absent in the spectra (300–800 nm range) are molecular emission bands that would appear if large excited molecules or fragments were present. Implications of the present results are discussed which relate to an early hypothesis about the laser ablation mechanism and their influence on high Tc film characteristics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2146-2154 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For Pb(ZrxTi1−x)O3 (PZT) thin-film capacitors to be used in ferroelectric nonvolatile memories, they must have low polarization fatigue and low leakage currents. PZT capacitors fabricated in our laboratory with RuO2 electrodes exhibit excellent polarization fatigue characteristics, but they have large and variable leakage currents (typically 10−3–10−4 A/cm2 at 1 V). On the other hand, PZT capacitors with Pt electrodes have low leakage currents (typically 〈10−9 A/cm2 at 1 V), but they undergo severe polarization fatigue. New (Pt,RuO2) hybrid electrodes which result in PZT capacitors that combine the excellent fatigue behavior of RuO2/PZT/RuO2 with the low leakage currents of Pt/PZT/Pt capacitors have been developed. The hybrid electrodes studied are of two main types: one type consisted of Pt/RuO2 or RuO2/Pt double layers, while the other consisted of a codeposited Pt–RuO2 layer. All capacitors discussed here had an RuO2/PZT/hybrid electrode/MgO heterostructure. It will be shown that capacitors with negligible fatigue (up to 1011 switching cycles) and with leakage currents that are two to four orders of magnitude lower than those of RuO2/PZT/RuO2 capacitors can be achieved. In addition, the capacitors with hybrid electrodes have very small retention loss. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7497-7505 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ablated flux characteristics of PbZr0.52Ti0.48O3 (PZT), La0.5Sr0.5CoO3 (LSC), and MgO ceramic targets have been studied as functions of the ablation time, the ablation energy, and the chamber gas pressure. The time dependence of the ablation rate shows an initial exponential decay, reaching a steady-state value at longer times. The energy dependence of the ablation rate (in vacuum) reveals a distinct ablation threshold energy for MgO ablation, while for PZT and LSC no ablation threshold is evident. The differences in the ablation characteristics of these materials are explained mainly by differences in their melting points, thermal conductivities, and absorption coefficients. Upon adding O2 gas, a visual change in the color and shape of the PZT ablation plume is evident. The color change indicates a gas phase reaction of the ablated species with the O2 gas, while the shape change implies a change in the angular distribution of the ablated species. We have measured a narrowing of the ablated flux distribution from a PZT target as O2 is added, from a cos40 θ distribution in a low pressure, up to a cos260 θ distribution in an O2 pressure of 300 mTorr. This narrowing, or focusing, of the ablation plume is observed with high laser energies and high pressures of O2 or noble gases. At low laser power, the deposition rate decreases and the plume broadens as the gas pressure is increased. The plume narrowing and plume broadening regimes are both controlled by gas scattering effects. The angular distribution of depositing species, and the ratio of deposition flux to O2 flux, are very different in each of these regimes.
    Type of Medium: Electronic Resource
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