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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 182-184 (Feb. 1995), p. 187-190 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1729-1733 
    ISSN: 0392-6737
    Keywords: Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter ; II–VI compounds and other chalcogenides ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary Picosecond photoluminescence spectroscopy was used to investigate the recombination dynamics of excitons in deep etched CdZnSe/ZnSe quantum wires with lateral extensions down to 20 nm. In the low-temperature regime (T≤10 K), no significant reduction of the exciton lifetime was found down to a wire width of 20 nm, indicating a negligible influence of carrier loss at the wire sidewalls. At higher temperatures, the lifetime decreases for decreasing wire width,e.g., from 330 ps in the mesa structure to 21 ps in the 28 nm wide wires at room temperature. Simple model calculations indicate that this drop of the lifetime is due to diffusive carrier transport to the wire sidewalls and subsequent non-radiative surface recombination.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4368-4372 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have analyzed the thermal stability of ZnSe-based single quantum well structures grown on a GaAs substrate by applying a rapid thermal annealing process. The photoluminescence intensity of the quantum well was used as a monitor for the thermal changes induced by the annealing process. X-ray diffractometry yields information about the crystal quality and the strain condition before and after the thermal treatment. As a main result, we found that the thermal stability of the quantum well photoluminescence signal critically depends on the thickness of the II–VI buffer layer, i.e., the distance between the active layer and the GaAs-II–VI heterointerface. For a buffer layer thickness of about 38 nm, the quantum well signal is totally quenched after a 1 min annealing step at 500 °C, while clear luminescence signals can be observed in samples with a 1 μm buffer even for a 750 °C process. Additionally, by comparing CdZnSe/ZnSe and ZnSe/ZnSSe quantum wells, we found that the Cd–Zn interdiffusion seems to be more efficient than the S–Se interdiffusion. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 933-935 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed picosecond time-resolved measurements on In0.53Ga0.47As/InP quantum wells with varying barrier thicknesses using 10 ps Nd:YAG excitation. For this excitation, holes and electrons are created in the In0.53Ga0.47As layers. Due to momentum conservation the Nd:YAG excitation accelerates the electrons above the InP barrier where they can diffuse but cannot recombine. By examining the rise time of the quantum well emission, we can show that for samples with thick barriers, the barrier geometry largely controls the dynamic properties of the carriers after Nd:YAG excitation.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 766-768 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermally induced interdiffusion in CdTe/CdMnTe quantum wells was investigated by photoluminescence spectroscopy. The single quantum well structures were grown by molecular beam epitaxy annealed by rapid thermal annealing for 1 min at temperatures between 380 and 520 °C. A blue shift close to the barrier energy was observed indicating an almost perfect interdiffusion between the well and the barrier material. We derive an activation energy of 2.8 eV for the interdiffusion process from a Fickian diffusion model applied to our experiments.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5456-5458 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article lasing action of (CdMg)Te quantum well laser structures is reported. The separate confinement quantum well laser structures were grown by molecular beam epitaxy. Stimulated emission has been observed at 77 K and at room temperature. The structures emitted at wavelengths of around 650 nm at room temperature. A (CdMg)Te/CdTe superlattice has been used for the active layer as well as for the electrical confinement layer. Due to this an efficient radiative recombination even at room temperature could be obtained. The distribution of the intensity of the light across the waveguide has been calculated.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7051-7055 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Be-enhanced formation of CdSe quantum dots in CdSe/ZnSe heterostructures grown by migration enhanced epitaxy on (001)GaAs substrates has been investigated using photoluminescence spectroscopy, x-ray techniques (diffraction and reflectometry), and transmission electron microscopy. Coverage of the ZnSe starting surface with a fractional monolayer of beryllium selenide leads to enhanced island formation well below the CdSe thickness of 0.6 monolayer corresponding to the onset of the CdSe-rich island formation in the Be-free structures. The effect of the fractional Be coverage is demonstrated by observation of sharp lines in the photoluminescence signal from patterned mesas with dimensions down to 60 nm, which is due to the emission from individual exciton localization sites attributed to quantum dots. X-ray diffraction and reflectometry measurements on CdSe/ZnSe short-period superlattices with the submonolayer CdSe insertions confirm an enhanced roughening of the CdSe layer morphology in the case of beryllium coverage. Cross-sectional transmission electron microscopy on the SLs with BeSe fractional monolayer exhibits Cd-induced stress modulation along the CdSe sheets with a lateral scale of ∼4 nm, that can also be interpreted in favor of the BeSe-nucleated CdSe-based quantum dots. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2937-2939 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Buried CdTe/CdMgTe quantum wires with a lateral confinement potential of about 290 meV have been realized. Using electron beam lithography, SiO2 stripes are defined on a single quantum well sample and a subsequent 2 h annealing step in a Zn atmosphere results in a surprisingly strong interdiffusion between Cd and Mg atoms under the capped areas, causing a lateral modulation of the band gap. We obtain, e.g., for a nominal wire width of 100 nm, a lateral subband splitting of more than 8 meV, while the extension of the squared exciton wave function of the ground state is reduced to about 20 nm due to the error function-like potential shape. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1872-1874 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on reversible spectral shifts in the emission spectra of self-organized CdSe single quantum dots on a time scale of seconds. Energy shifts of up to 3.5 meV have been observed and can be attributed to the Stark effect caused by fluctuating local electric fields. Most surprisingly, the energy shift turns out to be quasi-periodic with time constants between 70 and 190 s. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1224-1226 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature recombination dynamics has been investigated in a large set of different Cu(In,Ga)Se2 absorber films and compared to the electrical device characteristics of the respective solar cell modules. For a given cell preparation process, a characteristic relation between the low-injection minority-carrier lifetime of the absorber layers and the conversion efficiency of the solar cells is observed: Long lifetimes correlate with high open circuit voltages and conversion efficiencies, while no significant influence of the lifetime on the short circuit current is found. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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