ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
A classical implementation of the field plate technique is the oxide ramp termination.This paper presents improvements of the breakdown voltage for both SiC JBDs and SBDs, obtainedby using high-k dielectrics. A study regarding the influence of the dielectric permittivity andthickness on the off-state performances of the diodes is included. It is shown that Si3N4 is to bepreferred to SiO2 for the dielectric ramp. Termination efficiencies up to 96% are reported
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1087.pdf
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