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  • 1
    Electronic Resource
    Electronic Resource
    Intrinsic Cu gettering at a thermally grown SiO2/Si interface (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3313-3316 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiO2 film of 1500-A(ring) thickness has been grown by a conventional thermal dry oxidation process on commercial Si(111) and Si(100) wafers. A secondary-ion mass spectrometry study of the SiO2/Si structure showed that a gettering of Cu atoms, which were present in the Si wafers as residual impurities, has occurred at the SiO2/Si interface due to the thermal dry oxidation process. The areal concentration of the Cu atoms at the interface has been found to depend on the Cu concentration in the Si wafers. Areal concentrations in order of 1×1012/cm2 were measured at the interfaces. Facilitated by the high diffusivity of Cu in SiO2 and Si, the gettering is thermodynamically driven by the low solid solubility of Cu, either in SiO2 at the temperature range up to the oxidation temperature, or in Si at low temperatures as the wafers cool down. The defects generated at the SiO2/Si interface provide the nucleation sites for the Cu gettering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346383
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  • 2
    Electronic Resource
    Electronic Resource
    Study of interface impurity sputtering in partially ionized beam deposition of Cu on Si (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3619-3624 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cu thin films have been deposited on Si(111) substrate using partially ionized deposition technique in which the self-ions, i.e., the ions derived from the depositing materials themselves, are being used to concurrently bombard the substrate surface during thin film growth. The ion percentage in the deposition beam is in the range from 0% to 5% with the ion energy varying between a few eV and several keV. The Si(111) substrates are chemically cleaned by a RCA cleaning process before loading into the vacuum chamber of deposition. No in situ cleaning of the substrate surface is performed prior to deposition. A reduction of impurities such as oxygen, carbon, and hydrogen at the Cu/Si interface is observed as a function of the ion bombardment parameters using secondary-ion mass spectrometry. The estimates of the sputtering cross section of oxygen, carbon and hydrogen at the Cu/Si interface by Cu ions and their energy dependence are discussed in the framework of mechanisms of the impurity sputtering by low-energy ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346323
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  • 3
    Electronic Resource
    Electronic Resource
    Self-cleaning effect in partially ionized beam deposition of Cu films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4519-4521 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have shown that high-purity Cu films can be deposited on the Si substrate at room temperature in a conventional vacuum condition using the partially ionized beam technique. The beam contains about 2% of Cu self-ions and a bias potential of 1 kV is applied to the substrate during deposition. By using the secondary ion mass spectrometry technique we show that the Cu/Si interface is free of contaminants such as oxygen, carbon, and hydrogen, despite the fact that no in situ surface cleaning has been performed on the substrate prior to deposition. These phenomena are attributed to the self-cleaning effect induced by the energetic Cu ions bombardment during deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343954
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  • 4
    Electronic Resource
    Electronic Resource
    Formation of low-temperature Al/n-Si Schottky contacts using a partially ionized beam deposition technique (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 905-907 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality Al/n-Si Schottky contacts have been fabricated using the partially ionized beam (PIB) deposition technique in a conventional vacuum condition without post heat treatment. The electrical characteristics of the diodes were extremely uniform across a 3 in. wafer and were stable with respect to a furnance annealing performed at 450 °C for 30 min. Scanning electron microscope examination revealed much shallower pit formation on the Si surface, as compared to that deposited by conventional means, following the heat treatment. A completely smooth Si surface was observed after a 10 s rapid thermal annealing at 450 °C. The observed behavior could be attributed to the creation of "contact openings'' in the native oxide during deposition by ion bombardment, allowing Al to make an intimate contact to Si. This PIB deposition of metal-semiconductor contacts may be an important metallization scheme for the future low-temperature processing of shallow junctions for very high speed integrated circuits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100111
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  • 5
    Electronic Resource
    Electronic Resource
    Diffusion in Ni/Cu bilayer films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1824-1826 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that the diffusion of Cu into the Ni layer of a Ni/Cu bilayer film after thermal annealing is significantly reduced when the deposition temperature of the Ni layer is raised from approximately 50 to 200 °C. The effect of the deposition temperature on the physical structure of the Ni layer and the possible connection between the Ni layer physical structure and the diffusion reduction are investigated. The effect of the diffusion on the resistivity of the Cu layer is also studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107176
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  • 6
    Electronic Resource
    Electronic Resource
    Unusual orientation relationship for a copper film on Si(111) (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1859-1861 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The texture of a copper film deposited on bare Si(111) is studied. Deposition is done using the partially ionized beam technique where no potential is applied to the substrate. Pole figure analysis shows a very sharp texture where Cu{531} is parallel to Si(111). In the plane of the film, two variants of copper orientation are present with orientation relationships Si〈112¯〉//Cu〈13¯4〉and Si〈112¯〉//2.5° from Cu〈35¯0〉. The rotation between variants of 56.5° is less than the Cu(111) twin orientation. Possible reasons for the mismatch are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103069
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  • 7
    Electronic Resource
    Electronic Resource
    Low-resistivity Cu thin-film deposition by self-ion bombardment (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 198-200 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An anomalous reduction of the thin-film resistivity has been observed in the Cu deposition at room temperature using a partially ionized beam in which the self-ions are used to bombard the substrate surface during growth. A minimum thin-film resistivity of 1.83 μΩ cm has been obtained at 2 kV substrate bias voltage with an ion percentage of about 1% in the beam for films of 2500 A(ring) thickness. This is compared to the resistivity of close to 4 μΩ cm obtained by the conventional evaporation technique without the use of self-ions. We discuss the results within the framework of the theory of grain-boundary resistivity proposed by Mayadas and Shatzkets [Phys. Rev. B 1, 1382 (1970)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103024
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  • 8
    Electronic Resource
    Electronic Resource
    Terpenoids-LXXX - Synthesis of isobicycloekasantalic acid and related products
    Amsterdam : Elsevier
    Tetrahedron 22 (1966), S. 907-911 
    Details
    ISSN: 0040-4020
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0040-4020(66)80064-9
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  • 9
    Electronic Resource
    Electronic Resource
    Terpenoids-LXV - Transformation in the santalene-longifolene series
    Amsterdam : Elsevier
    Tetrahedron 21 (1965), S. 629-635 
    Details
    ISSN: 0040-4020
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/S0040-4020(01)82233-X
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  • 10
    Electronic Resource
    Electronic Resource
    Raman studies of structural order in amorphous silicon-boron alloys
    Amsterdam : Elsevier
    Solid State Communications 72 (1989), S. 159-161 
    Details
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1098(89)90514-0
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