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  • 1
    Electronic Resource
    Electronic Resource
    Binding energies of excitons in ionic quantum well structures (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1343-1347 
    Details
    ISSN: 0392-6737
    Keywords: Excitons and related phenomena (including electron-hole drops) ; Polarons and electron-phonon interactions ; Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; III-V compounds and systems ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We have calculated the binding energies of excitons in quantum well structures based on ionic semiconductors by including the electron-hole interactions with the longitudinal-optical-phonon field. We have taken into account these interactions by using different effective interaction potentials between the electron and the hole as derived by Haken, Aldrich and Bajaj, and Pollman and Buttner. We have calculated the binding energies of excitons in several ionic quantum well structures as functions of well width using these effective potentials following a variational approach. We find that the values of the exciton binding energies calculated using these potentials are always larger than those, obtained using a Coloumb potential screened by static dielectric constant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457207
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  • 2
    Electronic Resource
    Electronic Resource
    Photocurrent spectroscopy of InxGa1−xAs/GaAs multiple quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2230-2232 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photocurrent spectra of InxGa1−xAs/GaAs multiple quantum well structures grown by molecular beam epitaxy are studied in the presence of electric fields perpendicular to the heterointerface. Several Δn=0 allowed and Δn≠0 forbidden excitonic transitions are observed. Both negative and positive shifts of exciton transitions are found. Good agreement is found between the photocurrent observations and calculations using a multiband effective-mass approach, taking into account the strain-induced splitting.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101132
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  • 3
    Electronic Resource
    Electronic Resource
    Correlation between resonantly excited magnetic-field split donor-bound exciton components with their excited state emission analogues in GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 159-161 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We relate each resonantly excited spin-split component of the transition involving the first rotator state of the donor bound exciton complex with its analogous emission component in which the donor electron returns to an excited state in the presence of a magnetic field. The allowed and forbidden transitions for resonant excitation and emission of this system for two different chemical donors are observed and are compared with their calculated values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101215
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  • 4
    Electronic Resource
    Electronic Resource
    Absorptive electro-optic spatial light modulators: Effect of well profile on device performance (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 930-932 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the effect of well profile on the performance of absorptive electro-optic spatial light modulators based on multiquantum well structures. In particular we calculate the variation in exciton oscillator strength and the absorption coefficient at the signal wavelength as a function of applied electric field. For a monochromatic source at 1572 meV, for example, we consider modulators based on square, parabolic, and asymmetric triangular GaAs-AlxGa1−xAs quantum wells and find that at zero field the exciton oscillator strengths are comparable but that superior performance is obtained using asymmetric triangular wells. These conclusions hold even assuming fairly large exciton linewidths in triangular wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101727
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence study of liquid phase electroepitaxially grown GaInAsSb on (100)GaSb (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3958-3961 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature (4.5 K) photoluminescence (PL) spectra of liquid phase electroepitaxially grown GaSb and GaInAsSb have been examined. The excitonic transitions observed in GaSb and GaInAsSb layers of compositions close to the GaSb corner of the phase diagram indicate an excellent quality of the grown layers. A systematic trend in the low-temperature PL spectra is observed with the change in the alloy composition. The overall PL emission efficiency decreases and the number of excitonic transitions are fewer with the shift in the composition towards the lower band gap. Shift in the PL peak energy corresponding to the band to band transition with temperature was determined. The linear part of the shift above 100 K exhibits a slope of −0.3 meV/K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352859
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  • 6
    Electronic Resource
    Electronic Resource
    A quantum statistical theory of linewidths of radiative transitions due to compositional disordering in semiconductor alloys (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1788-1796 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantum statistical formalism has been developed for the excitonic luminescence linewidths and line shapes in semiconductor binary alloys due to band-gap fluctuations caused by the random distributions of the alloy components in an applied magnetic field. The virtual crystal approximation is used to estimate the local band-gap variations. The shifts of the excitonic transition energy due to the band-gap fluctuations are obtained using the first-order perturbation theory. A Gaussian line shape is obtained for the excitonic transition using standard statistical techniques. This formalism is applied to calculate the linewidths and line shapes associated with the ground-state excitonic transition as a function of alloy composition and magnetic-field strength in AlxGa1−xAs and InxGa1−xP alloys. The resulting linewidths and line shapes are in good agreement with the available low-temperature photoluminescence data; however, the calculated linewidths are consistently smaller than the measured values. The possible mechanisms responsible for this discrepancy are discussed. A comparison of excitonic linewidths obtained from the present theory with those calculated earlier is also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353215
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of electric and magnetic fields on confined donor states in a coupled double quantum well (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2848-2853 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a variational formalism to calculate the effects of electric and magnetic fields on confined hydrogenic donor states in asymmetric coupled double quantum well structures. It is demonstrated that an electric field applied along the growth axis can easily shift the electron wave function from one quantum well across the center barrier into the neighboring well, without ejecting the electron from a confined donor state. Depending on donor location in the structure, binding energy can either increase or decrease under the applied electric field, as had been found in the case of single quantum wells, but with significantly greater rates of change in response to the external field. The magnetic field applied along the growth axis of the quantum well structure leads to additional quantum confinement, increasing both the donor binding energies and the transition energy between the 1s and 2p+ donor states. Effect of the relative size of the two coupled quantum wells on the donor binding energy is also discussed. Dipole moment and polarizability of the confined donor states are obtained simultaneously as well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353037
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  • 8
    Electronic Resource
    Electronic Resource
    Erratum: "Low temperature photoluminescence of Te-doped GaSb grown by liquid phase electroepitaxy'' [J. Appl. Phys. 77, 5902 (1995)] (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1185-1185 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362713
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  • 9
    Electronic Resource
    Electronic Resource
    Low-temperature photoluminescence of Te-doped GaSb grown by liquid phase electroepitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5902-5909 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of a low-temperature (4.5 K) photoluminescence study of Te-doped GaSb layers grown by liquid phase electroepitaxy are reported. A doubly ionizable native residual acceptor (A/A−) with shallow and deep levels is observed at 34 and 97 meV, respectively, another native acceptor level for GaSb (B) is seen at 54 meV, and two Te-related acceptor levels (C and D) are found at 68 and 83 meV, respectively. In addition, a few Te-related deep levels are also seen between 114–129 meV at higher Te concentrations. The relative dominance of each of these transitions depends on the degree of Te compensation and the incident excitation intensity. At low excitation intensities, the spectra are dominated by deep impurity levels and with increasing intensity the transitions associated with the shallow acceptors become more prominent. The limited data on the PL integrated intensity dependance on excitation intensity further confirms the nature of these transitions. And finally, we also present preliminary results of our PL studies on Te-doped GaInAsSb alloys. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359170
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  • 10
    Electronic Resource
    Electronic Resource
    Exciton binding energy in a quantum wire in the presence of a magnetic field (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1097-1104 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A calculation of the ground-state energy of an exciton confined in a cylindrical quantum wire in the presence of a uniform magnetic field is reported as a function of wire radius, using a variational approach. It is assumed that the magnetic field is applied parallel to the axis of the wire. The calculations have been performed using a suitable variational wave function taken as a product of the appropriate confining confluent hypergeometric functions and a hydrogenic function for infinite and finite confining potentials. For a given value of the magnetic field, the binding energy is found to be larger than the zero-field case. This behavior is explained in terms of an average electron-hole separation, which depends on the wire radius, and the magnetic-field strength. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359582
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