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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Abdominal imaging 19 (1994), S. 157-159 
    ISSN: 1432-0509
    Keywords: Pancreas, cysts ; Pancreas, CT
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Lymphoepithelial cyst of the pancreas is a rare lesion which may mimic a pancreatic pseudocyst or mucinous cystic neoplasm. To our knowledge, this lesion has never been reported in the radiologic literature. We present a patient with lymphoepithelial cyst of the pancreas, and we discuss the radiographic and pathologic findings.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Abdominal imaging 19 (1994), S. 515-520 
    ISSN: 1432-0509
    Keywords: Spleen, trauma ; Fluid ; Hemoperitoneum ; Computed tomography
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Detection of hemoperitoneum in splenic trauma is as important as detection of the visceral injury itself. Observation of a consistent spectrum of fluid accumulation in patients with splenic trauma prompted us to investigate the patterns in more detail. Twenty-three computed tomographic (CT) scans in 20 patients were evaluated with respect to presence of fluid collections in various peritoneal and retroperitoneal compartments. These were correlated with severity of injury and operative and pathologic findings. Hemoperitoneum was detected in the pelvis (65%), paracolic gutters (52%), left subphrenic space (48%), perihepatic space (48%), Morison's pouch (17%) and in the lesser sac (9%). In addition to free fluid, pleural fluid (39%) and retroperitoneal hematoma in the left anterior pararenal space (13%) were also encountered. These ancillary findings may help to substantiate the diagnosis of splenic trauma in equivocal cases, particularly when the spleen itself is obscured by artifacts. Early detection may reduce mortality and morbidity associated with splenic trauma.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Low resistance p-layers are achieved in this paper using a graphite cap to protect SiCsurface from out-diffusion of Si during high temperature post-implantation annealing, which iscarried out to maximize the activation of Al dopant in 4H-SiC. With a graphite layer converted fromphotoresist, as high as 1700 and 1800oC post-implantation annealing is able to be used. Low RMSroughness of surface after high temperature annealing shows the effectiveness of the graphite cap.Small sheet resistance and resistivity are also achieved from the high temperature annealing. At roomtemperature, sheet resistances of 9.8 and 1.3 k[removed info]/□, and the corresponding resistivities of 235 and31 m[removed info]-cm are obtained from 1700 and 1800oC annealed samples, respectively. The Al ionizationenergy extracted from Arrhenius plot is also close to the typical reported values. Therefore, it can beconcluded that, using graphite cap could help to activate the Al dopant effectively during hightemperature annealing
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In this work, we have investigated triple and innovative multiple stacked contacts onto ptypeSiC in order to evaluate whether or not there is any improvement in morphology or specificcontact resistivity. The stacked metal contacts are based on Al, Ti and Ni with the specific contactresistivity measured at a low value of 5.02×10-6'cm2 for an Al(100 nm)/Ti(100 nm)/Al(10 nm)(where a “/” indicates the deposition sequence) triple stacked metal contact. XRD microstructuralanalysis and SEM measurements have been carried out and it has been discovered that the contacts,which formed the compound Ti3SiC2 at the metal/SiC interface, more readily display low-resistanceohmic characteristics after a post deposition anneal. Although the same amount of Ti (100 nm intotal) has been deposited closer to the metal/SiC interface, none of the multiple stacked structuresdisplayed ohmic behaviour after a post deposition anneal
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 1429-1432 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We evaluate the performance capabilities and limitations of high voltage 4H-SiC basedBipolar Junction Transistors (BJTs). Experimental forward characteristics of a 4kV BJT are studiedand simulations are employed to determine the factors behind the higher than expected specific onresistance(Ron,sp) for the device. The impact of material (minority carrier lifetimes), processing(surface recombination velocity) and design (p contact spacing from the emitter mesa) parameterson the forward active performance of this device are discussed and ways to lower Ron,sp, below theunipolar level, and increase the gain (β) are examined
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 1433-1436 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The performance prospects for 4H-SiC Bipolar Junction Transistors (BJTs) and InsulatedGate Bipolar Transistors (IGBTs) are theoretically evaluated. The total power dissipated (Ptotal) forboth devices is calculated as a function of lifetime in the drift region and blocking voltage and usedas a figure of merit to compare and contrast the effectiveness of different semiconductor materialsfor bipolar device applications. Assuming a maximum of 300W/cm2 for the total permissible powerdissipation due to heat sink constraints we estimate an upper limit of 5kV for SiC BJT operation
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Bioorganic & Medicinal Chemistry Letters 2 (1992), S. 249-254 
    ISSN: 0960-894X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Medicine
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Anaesthesia 58 (2003), S. 0 
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary This study compared the induction time, haemodynamic changes, recovery characteristics and patient satisfaction for sevoflurane and propofol when used as the main anaesthetic agents for cardioversion. Sixty-one unpremedicated patients scheduled for elective cardioversion were anaesthetised with either inhaled sevoflurane 8% or an intravenous propofol target-controlled infusion set at 6 µg.ml−1. There was no significant difference in induction time between the two groups: mean (SD) = 90.1(40) s in the sevoflurane group vs. 83.7(35) s in the propofol group. Mean (SD) time to recovery was significantly shorter in the sevoflurane group than in the propofol group: 318 (127) s vs. 738 (355) s, respectively, p 〈 0.001. At recovery, the patients in the propofol group had significantly lower systolic and diastolic blood pressures than those in the sevoflurane group, p 〈 0.001. The incidence of complications was low in both groups, with similar patient satisfaction expressed after the procedure. We conclude that sevoflurane is a suitable choice for anaesthesia for cardioversion and may provide greater haemodynamic stability than a target-controlled infusion of propofol.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Anaesthesia 60 (2005), S. 0 
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Histamine, an inflammatory mediator in its own right, may also be a marker for a more widespread systemic inflammatory process. In this study we have examined variations in plasma histamine concentrations produced during the course of cardiac surgery involving cardiopulmonary bypass, the relationship between these variations and intra-operative events. By assays of serum tryptase and CD-63 expression we have also attempted to identify the source of histamine. Histamine concentrations that were significantly raised from baseline level were demonstrated. These were elevated from the time of aortic cross-clamping and continued to be raised for 24 h postoperatively (p 〈 0.00625). This was associated with an increase in CD-63 expression (p 〈 0.025) (but not an increase in tryptase concentration) following aortic cross-clamping and protamine administration, suggesting that basophils are the source of histamine. 41% of patients had arrhythmias in the post bypass period. The rise in histamine levels was not related to the incidence of cardiac arrhythmias.
    Type of Medium: Electronic Resource
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