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  • 1
    ISSN: 1432-0630
    Keywords: PACS: 72.40; 73.60; 81.15; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  A novel combination of methods is shown to produce semiconducting WS2 thin films with properties close to those of a single crystal. The first step requires the deposition of a very thin Ni layer on a quartz substrate. On top of it an amorphous, sulphur rich, (WS 3+x ) thin film is deposited by reactive rf sputtering. The final annealing step in an argon atmosphere yields 200 nm thick WS2 films. X-ray diffraction shows that the films crystallize in the 2H-WS2 phase and are perfectly oriented with the (002) basal planes parallel to the substrate. Residual W18O49 needles and β-NiS grains are detected by transmission electron microscopy. The dc conductivity and its activation energy have values typical of bulk crystals. The optical absorption spectrum measured at Room Temperature (RT) shows excitonic peaks at the same energies as in a single crystal. RT photoconductivity measured as a function of wavelength is shown to result from interband transitions.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-0630
    Keywords: 72.40 ; 73.60 ; 81.15 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A novel combination of methods is shown to produce semiconducting WS2 thin films with properties close to those of a single crystal. The first step requires the deposition of a very thin Ni layer on a quartz substrate. On top of it an amorphous, sulphur rich, (WS3 +x ) thin film is deposited by reactive rf sputtering. The final annealing step in an argon atmosphere yields 200 nm thick WS2 films. X-ray diffraction shows that the films crystallize in the 2H-WS2 phase and are perfectly oriented with the (002) basal planes parallel to the substrate. Residual W18O49 needles andβ-NiS grains are detected by transmission electron microscopy. The dc conductivity and its activation energy have values typical of bulk crystals. The optical absorption spectrum measured at Room Temperature (RT) shows excitonic peaks at the same energies as in a single crystal. RT photoconductivity measured as a function of wavelength is shown to result from interband transitions.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 51-52 (May 1996), p. 335-340 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1418-1424 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a recent work, we showed that atomic force microscopy (AFM) is a powerful technique to image cross sections of polycrystalline thin films. In this work, we apply a modification of AFM, namely, electrostatic force microscopy (EFM), to investigate the electronic properties of cleaved II–VI and multijunction thin-film solar cells. We cleave the devices in such a way that they are still working with their nominal photovoltaic efficiencies and can be polarized for the measurements. This allows us to differentiate between surface effects (work function and surface band bending) and bulk device properties. In the case of polycrystalline CdTe/CdS/SnO2/glass solar cells, we find a drop of the EFM signal in the area of the CdTe/CdS interface (±50 nm). This drop varies in amplitude and sign according to the applied external bias and is compatible with an n-CdS/p-CdTe heterojunction model, thereby invalidating the possibility of a deeply buried n-p CdTe homojunction. In the case of a triple-junction GaInP/GaAs/Ge device, we observe a variation of the EFM signal linked to both the material work-function differences and to the voltage bias applied to the cell. We attempt a qualitative explanation of the results and discuss the implications and difficulties of the EFM technique for the study of such thin-film devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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