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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 195 (Nov. 1995), p. 49-54 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-0630
    Keywords: 42.70 ; 61.46. + w ; 68.55.Ln
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Light waveguides containing silver, introduced by ion-exchange process in soda-lime glass, has been annealed in hydrogen atmosphere at temperatures in the 120–250°C range. Annealings cause a near-surface precipitation of metallic silver to form nanometer-size clusters with good uniformity in size and spatial distribution. Hydrogen permeation and ion-exchange between hydrogen and sodium (which remains in the glass matrix after silver-for-sodium exchange) are steps of the annealing process. A further step is the diffusion of silver ions towards the surface, and its eventual precipitation, with an activation energy close to that measured for silver-sodium interdiffusion in glasses of comparable composition.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1432-0630
    Keywords: PACS: 42.70; 61.46.+w; 68.55.Ln
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Light waveguides containing silver, introduced by ion-exchange process in soda-lime glass, has been annealed in hydrogen atmosphere at temperatures in the 120–250 °C range. Annealings cause a near-surface precipitation of metallic silver to form nanometer-size clusters with good uniformity in size and spatial distribution. Hydrogen permeation and ion-exchange between hydrogen and sodium (which remains in the glass matrix after silver-for-sodium exchange) are steps of the annealing process. A further step is the diffusion of silver ions towards the surface, and its eventual precipitation, with an activation energy close to that measured for silver-sodium interdiffusion in glasses of comparable composition.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silver, copper, and mixed silver–copper nanocluster-doped silica thin layers were prepared by the sol-gel process. Samples were heat treated in different annealing atmospheres (air, argon, or 5%H2–95%N2) in the temperature range 500–1100 °C. Specimens were characterized by optical absorption spectroscopy, Rutherford backscattering spectrometry, x-ray diffraction, and transmission electron microscopy. Cluster growth and dissolution, as well as migration of metal atoms towards the sample surface, with a subsequent evaporation, were observed to occur at temperatures that depend on the annealing atmosphere. In the mixed silver–copper system, the formation of Ag–Cu phase-separated clusters was observed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1294-1300 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fused silica and soda-lime glasses were implanted with copper, copper+nitrogen and copper+argon. Samples were characterized primarily by x-ray photoelectron spectroscopy and x-ray-excited Auger electron spectroscopy. Measurements of optical absorption, transmission electron microscopy, secondary-ion mass spectrometry, and Rutherford backscattering spectrometry were also carried out. Copper nanocluster formation and their size have been found to depend on the reactivity of the host vitreous matrix as well as on the implanted metal concentration. In the copper+nitrogen-implanted fused silica a chemical interaction between copper and nitrogen together with the dissolution of the metallic nanoclusters has been observed. In the copper+nitrogen-implanted soda-lime glass interactions between substrate and nitrogen occur without the dissolution of copper precipitates. The dissolution of copper clusters is induced in the soda-lime glass when implantation with argon (which does not chemically react with the host glass substrate) is made. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3528-3536 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemistry of an argon-ion-irradiated interface between an amorphous silicon dioxide film and a silicon single-crystal substrate was studied by determining the kind and depth distribution of compounds formed after nitrogen implantation at a depth more shallow than the SiO2 film thickness. With this study we intended to obtain some insight into the chemical and physical processes involved in the formation of silicon oxynitrides in silica as a consequence of nitrogen ion implantations. Samples were mainly characterized by x-ray photoelectron and Fourier-transform infrared spectroscopies. Scanning electron microscopy, Rutherford backscattering spectrometry, nuclear reaction analysis, and secondary-ion mass spectrometry techniques were also used to complete the set of results. The experimental evidences are consistent with a picture of an argon-induced radiation damage in terms of Si—O and Si—Si bond breaking in the SiO2 and in the silicon substrate regions, respectively. The subsequently implanted nitrogen atoms are drawn toward the interface by a chemical driving force, and there interact with unsaturated silicon bonds to produce SiOxNy or SiNz compounds. The formation of a large amount of these compounds at the interface is responsible for very rough surface morphological features.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7360-7362 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dual-ion-beam technique for the deposition of TiN thin films is described. The metal-atom flux is supplied by sputtering a titanium target with an inert ion beam, while the reactive flux is supplied directly to the growing film by a low-energy ion beam. Results are presented for titanium films deposited at room temperature under a range of N+2 ion bombardment to form TiN. Analysis gives the incorporation of nitrogen, the background gas contamination, and the optical and electrical properties of TiN films.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 8040-8049 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural modifications induced in fused silica and soda-lime glasses by implantation (argon, nitrogen) have been studied using step-height profilometry, Rutherford backscattering spectrometry, transmission electron microscopy, and scanning electron microscopy. The step-height measurements indicated a transformation in structure (−ΔL to +ΔL) at energy depositions on the order of 1023 keV/cm3 for both fused silica and soda-lime glasses. This change modifies the three-membered ring structure in fused silica initiated by the lower deposition energy of 1–2×1020 keV/cm3. The Rutherford backscattering spectrometry measurements show the initiation of the new structure by changes in the argon peak and a spreading of the argon to greater depths. The scanning and transmission electron microscopy measurements are complementary to these changes. The data presented can be understood in terms of ion-implantation induced stress. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3953-3955 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We used the Z-scan technique for measuring the nonlinear refractive index n2 of a thin composite film formed by copper nanoparticles embedded in silica glass. By varying the number of pulses of the laser shot, we evidenced heating effects induced by the laser during measurements. We were able to estimate the nonthermal refractive-index value, n2=(3.0±0.3)×10−12 cm2/W. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2884-2886 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous nanoclusters of chromium and titanium silicides have been synthesized by implanting 35 keV chromium and 30 keV titanium ions, at a fluence of 1×1017 cm−2 in amorphous silica. The cluster stoichiometries were [Cr]/[Si]=1.6±0.3 and [Ti]/[Si]=1.1±0.3, respectively, as obtained by energy dispersive spectroscopic x-ray microanalysis and confirmed by x-ray photoelectron spectroscopy analysis. Titanium-implanted ions are more reactive than chromium ones in terms of the formation of chemical bonds with silicon of the host silica matrix. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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